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CEM3120 Datasheet(数据表) 2 Page - Chino-Excel Technology

部件型号  CEM3120
说明  N-Channel Enhancement Mode Field Effect Transistor
下载  4 Pages
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制造商  CET [Chino-Excel Technology]
网页  http://www.cetsemi.com
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CEM3120 Datasheet(HTML) 2 Page - Chino-Excel Technology

   
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CEM3120
Electrical Characteristics T
A = 25 C unless otherwise noted
Parameter
Symbol
Min
Units
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Threshold Voltage
Static Drain-Source
On-Resistance
BVDSS
IDSS
IGSSR
IGSSF
15
12.5
1
-100
100
1
m
V
nA
nA
µ
A
V
2
Gate Body Leakage Current, Reverse
On Characteristics c
Dynamic Characteristics d
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
Switching Characteristics d
Turn-On Delay Time
Turn-Off Fall Time
Turn-Off Delay Time
Turn-On Rise Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current b
Drain-Source Diode Forward Voltage c
Test Condition
VGS = 0V, ID = 250µA
VGS(th)
RDS(on)
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
IS
VSD
Typ
Max
30
VDS = 30V, VGS = 0V
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
VGS = VDS, ID = 250µA
VGS = 10V, ID =10A
VGS = 4.5V, ID =4.5A
VDS = 15V, ID = 10A,
VGS = 10V
VDS = 15V, VGS = 0V,
f = 1.0 MHz
VGS = 0V, IS = 10A
970
160
85
15
3.2
29
7
30
6.4
58
14
15
2.8
1.7
19.9
10
1.3
22
17
m
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
A
V
3
5
VDD = 15V, ID = 10A,
VGS = 10V, RGEN = 0.3Ω
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Surface Mounted on FR4 Board, t < 10 sec.
c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
d.Guaranteed by design, not subject to production testing.




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