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CEM2108 Datasheet(数据表) 3 Page - Chino-Excel Technology

部件型号  CEM2108
说明  Dual N-Channel Enhancement Mode Field Effect Transistor
下载  4 Pages
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制造商  CET [Chino-Excel Technology]
网页  http://www.cetsemi.com
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CEM2108 Datasheet(HTML) 3 Page - Chino-Excel Technology

   
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CEM2108
3
VDS, Drain-to-Source Voltage (V)
Figure 1. Output Characteristics
VGS, Gate-to-Source Voltage (V)
Figure 2. Transfer Characteristics
VDS, Drain-to-Source Voltage (V)
Figure 3. Capacitance
TJ, Junction Temperature( C)
Figure 4. On-Resistance Variation
with Temperature
1.8
1.6
1.4
1.2
1.0
0.8
0.6
V
GS=4.5V
I
D=10A
-100
-50
0
50
100
150
200
TJ, Junction Temperature( C)
Figure 5. Gate Threshold Variation
with Temperature
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
V
DS=VGS
I
D=250µA
-50
-25
0
25
50
75
100
125
150
VSD, Body Diode Forward Voltage (V)
Figure 6. Body Diode Forward Voltage
Variation with Source Current
0.4
0.6
0.8
1.0
10
0
10
-1
10
1
1.4
1.2
V
GS=0V
5
25
20
15
10
5
0
0.0
0.5
2.0
1.5
1.0
V
GS=2.0V
V
GS=5,4,3V
V
GS=2.5V
25
20
15
10
5
0
1
2
0
3
T
J=125 C
-55 C
25 C
Ciss
Coss
Crss
3600
3000
2400
1800
1200
600
0
0
5
10
15
20
25




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