 |
数据搜索系统，热门电子元器件搜索 |
|
|
数据搜索系统，热门电子元器件搜索 |
|
CEM2082 Datasheet(数据表) 2 Page - Chino-Excel Technology |
|
||||||||||||||||||||||||||||||
CEM2082 Datasheet(HTML) 2 Page - Chino-Excel Technology |
|
|
2 page 
CEM2082 Electrical Characteristics T A = 25 C unless otherwise noted Parameter Symbol Min Units Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Forward Transconductance Gate Threshold Voltage Static Drain-Source On-Resistance BVDSS IDSS IGSSR IGSSF 12 9 0.6 -100 100 1 m Ω V nA nA µ A V S 2 Gate Body Leakage Current, Reverse On Characteristics c Dynamic Characteristics d Input Capacitance Reverse Transfer Capacitance Output Capacitance Switching Characteristics d Turn-On Delay Time Turn-Off Fall Time Turn-Off Delay Time Turn-On Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current b Drain-Source Diode Forward Voltage c Test Condition VGS = 0V, ID = 250µA VGS(th) RDS(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS VSD Typ Max 20 VDS = 20V, VGS = 0V VGS = 12V, VDS = 0V VGS = -12V, VDS = 0V VGS = VDS, ID = 250µA VGS = 4.5V, ID = 10A VGS = 2.5V, ID = 8A VDS = 10V, ID = 10A VDD = 15V, ID = 10A, VGS = 5V, RGEN = 5.6Ω VDS = 15V, ID = 10A, VGS = 5V VDS = 10V, VGS = 0V, f = 1.0 MHz VGS = 0V, IS = 2.3A 2800 520 380 17 16 68 31 35 33 140 60 31 4.6 10 40 2.3 1.2 16 18 13 m Ω pF pF pF ns ns ns ns nC nC nC A V 1.3 Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Surface Mounted on FR4 Board, t < 10 sec. c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. d.Guaranteed by design, not subject to production testing. |
Chinese▼
English
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
