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CEH2311 Datasheet(数据表) 2 Page - Chino-Excel Technology

部件型号  CEH2311
说明  P-Channel Enhancement Mode Field Effect Transistor
下载  4 Pages
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制造商  CET [Chino-Excel Technology]
网页  http://www.cetsemi.com
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CEH2311 Datasheet(HTML) 2 Page - Chino-Excel Technology

   
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CEH2311
Electrical Characteristics T
A = 25 C unless otherwise noted
Parameter
Symbol
Min
Units
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Forward Transconductance
Gate Threshold Voltage
Static Drain-Source
On-Resistance
BVDSS
IDSS
IGSSR
IGSSF
85
70
-0.6
-100
100
-1
m
V
nA
nA
µ
A
V
S
8 - 31
Gate Body Leakage Current, Reverse
On Characteristics c
Dynamic Characteristics d
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
Switching Characteristics d
Turn-On Delay Time
Turn-Off Fall Time
Turn-Off Delay Time
Turn-On Rise Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current b
Drain-Source Diode Forward Voltage c
Test Condition
VGS = 0V, ID = -250µA
VGS(th)
RDS(on)
gFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
IS
VSD
Typ
Max
-20
VDS = -20V, VGS = 0V
VGS = 12V, VDS = 0V
VGS = -12V, VDS = 0V
VGS = VDS, ID = -250µA
VGS = -4.5V, ID = -4.5A
VGS = -2.5V, ID = -3.7A
VDS = -10V, ID = -4.5A
VDD = -10V, ID = -1A,
VGS = -4.5V, RGEN = 6Ω
VDS = -10V, ID = -4.5A,
VGS = -4.5V
VDS = -8V, VGS = 0V,
f = 1.0 MHz
VGS = 0V, IS = -1.7A
880
270
175
11
5
32
23
20
10
65
45
11
1.5
2.1
14.5
-1.7
-1.2
10
130
97
m
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
A
V
-1
8
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Surface Mounted on FR4 Board, t < 5 sec.
c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
d.Guaranteed by design, not subject to production testing.




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