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数据搜索系统，热门电子元器件搜索 |
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数据搜索系统，热门电子元器件搜索 |
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CEH2311 Datasheet(数据表) 2 Page - Chino-Excel Technology |
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CEH2311 Datasheet(HTML) 2 Page - Chino-Excel Technology |
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2 page 
CEH2311 Electrical Characteristics T A = 25 C unless otherwise noted Parameter Symbol Min Units Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Forward Transconductance Gate Threshold Voltage Static Drain-Source On-Resistance BVDSS IDSS IGSSR IGSSF 85 70 -0.6 -100 100 -1 m Ω V nA nA µ A V S 8 - 31 Gate Body Leakage Current, Reverse On Characteristics c Dynamic Characteristics d Input Capacitance Reverse Transfer Capacitance Output Capacitance Switching Characteristics d Turn-On Delay Time Turn-Off Fall Time Turn-Off Delay Time Turn-On Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current b Drain-Source Diode Forward Voltage c Test Condition VGS = 0V, ID = -250µA VGS(th) RDS(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS VSD Typ Max -20 VDS = -20V, VGS = 0V VGS = 12V, VDS = 0V VGS = -12V, VDS = 0V VGS = VDS, ID = -250µA VGS = -4.5V, ID = -4.5A VGS = -2.5V, ID = -3.7A VDS = -10V, ID = -4.5A VDD = -10V, ID = -1A, VGS = -4.5V, RGEN = 6Ω VDS = -10V, ID = -4.5A, VGS = -4.5V VDS = -8V, VGS = 0V, f = 1.0 MHz VGS = 0V, IS = -1.7A 880 270 175 11 5 32 23 20 10 65 45 11 1.5 2.1 14.5 -1.7 -1.2 10 130 97 m Ω pF pF pF ns ns ns ns nC nC nC A V -1 8 Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Surface Mounted on FR4 Board, t < 5 sec. c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. d.Guaranteed by design, not subject to production testing. |
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