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CEG8205A Datasheet(数据表) 1 Page - Chino-Excel Technology

部件型号  CEG8205A
说明  Dual N-Channel Enhancement Mode Field Effect Transistor
下载  4 Pages
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制造商  CET [Chino-Excel Technology]
网页  http://www.cetsemi.com
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CEG8205A Datasheet(HTML) 1 Page - Chino-Excel Technology

   
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Dual N-Channel Enhancement Mode Field Effect Transistor
CEG8205A
FEATURES
20V, 6A, RDS(ON) = 21mΩ (typ) @VGS = 4.5V.
RDS(ON) = 30mΩ (typ) @VGS = 2.5V.
Super High dense cell design for extremely low RDS(ON).
High power and current handing capability.
TSSOP-8 for Surface Mount Package.
ABSOLUTE MAXIMUM RATINGS T
A = 25 C unless otherwise noted
Parameter
Symbol
Limit
Units
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed a
Maximum Power Dissipation
VDS
VGS
ID
PD
IDM
20
1.5
25
6
±12
V
W
A
A
V
8 - 18
D
S1
S1
G1
1
4
3
2
8
5
6
7
D
S2
S2
G2
Lead free product is acquired.
http://www.cetsemi.com
TSSOP-8
G2
S2
S2
D
G1
S1
S1
D
Rev 1.
2005.November
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
C
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient b
Parameter
Symbol
Limit
Units
C/W
83
R
θJA




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