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CEG8205A Datasheet(数据表) 1 Page - Chino-Excel Technology |
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CEG8205A Datasheet(HTML) 1 Page - Chino-Excel Technology |
1 page ![]() Dual N-Channel Enhancement Mode Field Effect Transistor CEG8205A FEATURES 20V, 6A, RDS(ON) = 21mΩ (typ) @VGS = 4.5V. RDS(ON) = 30mΩ (typ) @VGS = 2.5V. Super High dense cell design for extremely low RDS(ON). High power and current handing capability. TSSOP-8 for Surface Mount Package. ABSOLUTE MAXIMUM RATINGS T A = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation VDS VGS ID PD IDM 20 1.5 25 6 ±12 V W A A V 8 - 18 D S1 S1 G1 1 4 3 2 8 5 6 7 D S2 S2 G2 Lead free product is acquired. http://www.cetsemi.com TSSOP-8 G2 S2 S2 D G1 S1 S1 D Rev 1. 2005.November Operating and Store Temperature Range TJ,Tstg -55 to 150 C Thermal Characteristics Thermal Resistance, Junction-to-Ambient b Parameter Symbol Limit Units C/W 83 R θJA |