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CEG8205A Datasheet(数据表) 4 Page - Chino-Excel Technology

部件型号  CEG8205A
说明  Dual N-Channel Enhancement Mode Field Effect Transistor
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制造商  CET [Chino-Excel Technology]
网页  http://www.cetsemi.com
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CEG8205A Datasheet(HTML) 4 Page - Chino-Excel Technology

   
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CEG8205A
8 - 21
Qg, Total Gate Charge (nC)
Figure 7. Gate Charge
VDS, Drain-Source Voltage (V)
Figure 8. Maximum Safe
Operating Area
Figure 9. Switching Test Circuit
Figure 10. Switching Waveforms
t
V
V
t
t
d(on)
OUT
IN
on
r
10%
td(off)
90%
10%
10%
50%
50%
90%
toff
tf
90%
PULSE WIDTH
INVERTED
VDD
R
D
V
V
R
S
V
G
GS
IN
GEN
OUT
L
Square Wave Pulse Duration (sec)
Figure 11. Normalized Thermal Transient Impedance Curve
10
-3
10
-4
PDM
t1
t2
1. RθJA (t)=r (t) * RθJA
2. RθJA=See Datasheet
3. TJM-TA = P* RθJA (t)
4. Duty Cycle, D=t1/t2
10
0
Single Pulse
0.01
10
-1
10
-2
10
1
10
2
10
0
10
-1
10
-2
10
-3
0.02
0.05
0.1
0.2
D=0.5
10
2
10
1
10
0
10
-1
10
-2
10
2
10
1
10
0
10
-1
10
-2
Single Pulse
T
A=25 C
T
J=150 C
1ms
1s
100ms
10ms
DC
R
DS(ON)Limit
5
4
3
2
1
0
0
3
6
9
12
V
DS=10V
I
D=4.5A
8




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