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CEA6861 Datasheet(数据表) 1 Page - Chino-Excel Technology |
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CEA6861 Datasheet(HTML) 1 Page - Chino-Excel Technology |
1 page ![]() P-Channel Enhancement Mode Field Effect Transistor CEA6861 FEATURES -60V, -2.4A, RDS(ON) = 135mΩ @VGS = -10V. RDS(ON) = 180mΩ @VGS = -4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. SOT-89 package. ABSOLUTE MAXIMUM RATINGS T A = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation VDS VGS ID PD IDM -60 1.25 -10 -2.4 ±20 V W A A V 1 S G D SOT-89 D D S G Lead free product is acquired. Operating and Store Temperature Range TJ,Tstg -55 to 150 C Thermal Characteristics Thermal Resistance, Junction-to-Ambient b Parameter Symbol Limit Units C/W 100 R θJA http://www.cetsemi.com Rev 1. 2006.Sep Details are subject to change without notice . |