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CEA6861 Datasheet(数据表) 1 Page - Chino-Excel Technology

部件型号  CEA6861
说明  P-Channel Enhancement Mode Field Effect Transistor
下载  4 Pages
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制造商  CET [Chino-Excel Technology]
网页  http://www.cetsemi.com
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CEA6861 Datasheet(HTML) 1 Page - Chino-Excel Technology

   
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P-Channel Enhancement Mode Field Effect Transistor
CEA6861
FEATURES
-60V, -2.4A, RDS(ON) = 135mΩ @VGS = -10V.
RDS(ON) = 180mΩ @VGS = -4.5V.
High dense cell design for extremely low RDS(ON).
Rugged and reliable.
SOT-89 package.
ABSOLUTE MAXIMUM RATINGS T
A = 25 C unless otherwise noted
Parameter
Symbol
Limit
Units
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed a
Maximum Power Dissipation
VDS
VGS
ID
PD
IDM
-60
1.25
-10
-2.4
±20
V
W
A
A
V
1
S
G
D
SOT-89
D
D
S
G
Lead free product is acquired.
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
C
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient b
Parameter
Symbol
Limit
Units
C/W
100
R
θJA
http://www.cetsemi.com
Rev 1.
2006.Sep
Details are subject to change without notice .




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