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CEA6861 Datasheet(数据表) 3 Page - Chino-Excel Technology

部件型号  CEA6861
说明  P-Channel Enhancement Mode Field Effect Transistor
下载  4 Pages
Scroll/Zoom Zoom In 100% Zoom Out
制造商  CET [Chino-Excel Technology]
网页  http://www.cetsemi.com
标志 

CEA6861 Datasheet(HTML) 3 Page - Chino-Excel Technology

   
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 3 page
background image
CEA6861
3
Ciss
Coss
Crss
1200
1000
800
600
400
200
0
0
6
12
18
24
30
-VDS, Drain-to-Source Voltage (V)
Figure 1. Output Characteristics
-VGS, Gate-to-Source Voltage (V)
Figure 2. Transfer Characteristics
-VDS, Drain-to-Source Voltage (V)
Figure 3. Capacitance
2.2
1.9
1.6
1.3
1.0
0.7
0.4
V
GS=-10V
I
D=-2.4A
-100
-50
0
50
100
150
200
TJ, Junction Temperature( C)
Figure 5. Gate Threshold Variation
with Temperature
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
V
DS=VGS
I
D=-250µA
-50
-25
0
25
50
75
100
125
150
-VSD, Body Diode Forward Voltage (V)
Figure 6. Body Diode Forward Voltage
Variation with Source Current
5
4
3
2
1
0
0
2
4
6
1
3
5
T
J=125 C
-55 C
25 C
TJ, Junction Temperature( C)
Figure 4. On-Resistance Variation
with Temperature
0.4
0.6
0.8
1.0
10
0
10
-1
10
1
1.4
1.2
V
GS=0V
10
0.0
0.5
1.0
2.5
1.5
2.0
8
6
4
2
0
-V
GS=3.0V
-V
GS=10,8,6,5V




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