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数据搜索系统，热门电子元器件搜索 |
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数据搜索系统，热门电子元器件搜索 |
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CEA6861 Datasheet(数据表) 2 Page - Chino-Excel Technology |
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CEA6861 Datasheet(HTML) 2 Page - Chino-Excel Technology |
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2 page 
CEA6861 Electrical Characteristics Tc = 25 C unless otherwise noted Parameter Symbol Min Units Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Threshold Voltage Static Drain-Source On-Resistance BVDSS IDSS IGSSR IGSSF 135 105 -1 -3 -100 100 -1 m Ω V nA nA µ A V 2 Gate Body Leakage Current, Reverse On Characteristics b Dynamic Characteristics c Input Capacitance Reverse Transfer Capacitance Output Capacitance Switching Characteristics c Turn-On Delay Time Turn-Off Fall Time Turn-Off Delay Time Turn-On Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage b Test Condition VGS = 0V, ID = -250µA VGS(th) RDS(on) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS VSD Typ Max -60 VDS = -60V, VGS = 0V VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V VGS = VDS, ID = -250µA VGS = -10V, ID = -2.4A VGS = -4.5V, ID = -1.9A VDD = -30V, ID = -1A, VGS = -10V, RGEN = 6Ω VDS = -30V, ID = -2.4A, VGS = -10V VDS = -30V, VGS = 0V, f = 1.0 MHz VGS = 0V, IS = -1.3A 890 90 85 13 5 39 13 26 10 78 26 11.2 2.6 1.8 14.8 -2.4 -1.2 180 135 m Ω pF pF pF ns ns ns ns nC nC nC A V 6 Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. c.Guaranteed by design, not subject to production testing. |
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