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FXL4TD245 数据表(PDF) 5 Page - Fairchild Semiconductor |
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FXL4TD245 数据表(HTML) 5 Page - Fairchild Semiconductor |
5 / 12 page ©2006 Fairchild Semiconductor Corporation www.fairchildsemi.com FXL4TD245 Rev. 1.0.4 5 Notes: 3. VCCI = the VCC associated with the data input under test. 4. VCCO = the VCC associated with the output under test. 5. Don't Care = Any valid logic level. 6. Reflects current per supply, VCCA or VCCB. IOFF Power Off Leakage Current An, VI or VO = 0V to 3.6V 0 3.6 ±10.0 µA Bn, VI or VO = 0V to 3.6V 3.6 0 ±10.0 IOZ 3-STATE Output Leakage(5) 0 ≤ VO ≤ 3.6V VI = VIH or VIL An, Bn OE = VIH 3.6 3.6 ±10.0 µA Bn, OE = Don't Care 0 3.6 +10.0 An, OE = Don't Care 3.6 0 +10.0 ICCA/B Quiescent Supply Current(6) VI = VCCI or GND; IO = 0 1.1–3.6 1.1–3.6 20.0 µA ICCZ Quiescent Supply Current(6) VI = VCCI or GND; IO = 0 1.1–3.6 1.1–3.6 20.0 µA ICCA Quiescent Supply Current VI = VCCA or GND; IO = 0 0 1.1–3.6 −10.0 µA VI = VCCA or GND; IO = 0 1.1–3.6 0 10.0 µA ICCB Quiescent Supply Current VI = VCCB or GND; IO = 0 1.1–3.6 0 −10.0 µA VI = VCCB or GND; IO = 0 0 1.1–3.6 10.0 µA ∆ICCA/B Increase in ICC per Input; Other Inputs at VCC or GND VIH = 3.0 3.6 3.6 500 µA Symbol Parameter Conditions VCCI (V) VCCO (V) Min. Max. Units DC Electrical Characteristics (Continued) |
类似零件编号 - FXL4TD245 |
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类似说明 - FXL4TD245 |
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