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BYV28 数据表(PDF) 3 Page - NXP Semiconductors |
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BYV28 数据表(HTML) 3 Page - NXP Semiconductors |
3 / 16 page 1997 Nov 24 3 Philips Semiconductors Product specification Ultra fast low-loss controlled avalanche rectifiers BYV28 series ELECTRICAL CHARACTERISTICS Tj =25 °C unless otherwise specified. IFRM repetitive peak forward current Ttp =85 °C; see Figs 6 and 7 BYV28-50 to 400 − 32 A BYV28-500 and 600 − 31 A IFRM repetitive peak forward current Tamb =60 °C; see Figs 8 and 9 BYV28-50 to 400 − 17 A BYV28-500 and 600 − 16 A IFSM non-repetitive peak forward current t = 10 ms half sine wave; Tj =Tj max prior to surge; VR =VRRMmax − 90 A ERSM non-repetitive peak reverse avalanche energy L = 120 mH; Tj =Tj max prior to surge; inductive load switched off − 20 mJ Tstg storage temperature −65 +175 °C Tj junction temperature see Fig.12 −65 +175 °C SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VF forward voltage IF = 3.5 A; Tj =Tj max; see Figs 13, 14 and 15 BYV28-50 to 200 −− 0.80 V BYV28-300 and 400 −− 0.83 V BYV28-500 and 600 −− 0.98 V VF forward voltage IF = 3.5 A; see Figs 13, 14 and 15 BYV28-50 to 200 −− 1.02 V BYV28-300 and 400 −− 1.05 V BYV28-500 and 600 −− 1.25 V V(BR)R reverse avalanche breakdown voltage IR = 0.1 mA BYV28-50 55 −− V BYV28-100 110 −− V BYV28-150 165 −− V BYV28-200 220 −− V BYV28-300 330 −− V BYV28-400 440 −− V BYV28-500 560 −− V BYV28-600 675 −− V IR reverse current VR =VRRMmax; see Fig.16 −− 5 µA VR =VRRMmax; Tj = 165 °C; see Fig.16 −− 150 µA trr reverse recovery time when switched from IF =0.5AtoIR =1A; measured at IR = 0.25 A; see Fig.22 BYV28-50 to 200 −− 25 ns BYV28-300 to 600 −− 50 ns SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT |
类似零件编号 - BYV28 |
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类似说明 - BYV28 |
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