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BYG50D 数据表(PDF) 3 Page - NXP Semiconductors |
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BYG50D 数据表(HTML) 3 Page - NXP Semiconductors |
3 / 6 page 1996 May 24 3 Philips Semiconductors Preliminary specification Controlled avalanche rectifiers BYG50 series ELECTRICAL CHARACTERISTICS Tj =25 °C; unless otherwise specified. THERMAL CHARACTERISTICS Notes 1. Device mounted on Al2O3 printed-circuit board, 0.7 mm thick; thickness of copper ≥35 µm, see Fig.7. 2. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper ≥40 µm, see Fig.7. For more information please refer to the “General Part of associated Handbook”. ERSM non-repetitive peak reverse avalanche energy L = 120 mH; Tj =Tj max prior to surge; inductive load switched off BYG50D to J − 10 mJ BYG50K and M − 7 mJ Tstg storage temperature −65 +175 °C Tj junction temperature see Fig.4 −65 +175 °C SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VF forward voltage IF =1A; Tj =Tj max; see Fig.5 −− 0.85 V IF = 1 A; see Fig.5 −− 1.00 V V(BR)R reverse avalanche breakdown voltage IR = 0.1 mA BYG50D 300 −− V BYG50G 500 −− V BYG50J 700 −− V BYG50K 900 −− V BYG50M 1100 −− V IR reverse current VR =VRRMmax; see Fig.6 −− 1 µA VR =VRRMmax; Tj = 165 °C; see Fig.6 −− 100 µA trr reverse recovery time when switched from IF = 0.5 A to IR = 1 A; measured at IR = 0.25 A; see Fig.8 − 2 − µs SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-tp thermal resistance from junction to tie-point 25 K/W Rth j-a thermal resistance from junction to ambient note 1 100 K/W note 2 150 K/W SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT |
类似零件编号 - BYG50D |
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类似说明 - BYG50D |
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