BYD13K datasheet(3/7 Pages) PHILIPS

部件名	BYD13K

功能描述	Controlled avalanche rectifiers

Download	7 Pages

Scroll/Zoom	100%

制造商	PHILIPS [NXP Semiconductors]

网页	http://www.nxp.com

标志

3 / 7 page

1996 May 24

3

Philips Semiconductors

Product speciﬁcation

Controlled avalanche rectiﬁers

BYD13 series

ELECTRICAL CHARACTERISTICS

Tj =25 °C; unless otherwise speciﬁed.

THERMAL CHARACTERISTICS

Note

1. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper

≥40 µm, see Fig.9.

For more information please refer to the

“General Part of associated Handbook”.

IF(AV)

average forward current

Ttp =55 °C; lead length = 10 mm;

averaged over any 20 ms period;

see Figs 2 and 4

−

1.40

A

Tamb =65 °C; PCB mounting

(see Fig.9);

averaged over any 20 ms period;

see Figs 3 and 4

−

0.75

A

IFSM

non-repetitive peak forward current

t = 10 ms half sinewave;

Tj =Tj max prior to surge;

VR =VRRMmax

−

20

A

ERSM

non-repetitive peak reverse

avalanche energy

L = 120 mH; Tj =Tj max prior to

surge; inductive load switched off

−

7

mJ

Tstg

storage temperature

−65

+175

°C

Tj

junction temperature

see Fig.5

−65

+175

°C

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

VF

forward voltage

IF =1A; Tj =Tj max; see Fig.6

−−

0.93

V

IF = 1 A; see Fig.6

−−

1.05

V

V(BR)R

reverse avalanche

breakdown voltage

IR = 0.1 mA

BYD13D

225

−−

V

BYD13G

450

−−

V

BYD13J

650

−−

V

BYD13K

900

−−

V

BYD13M

1100

−−

V

IR

reverse current

VR =VRRMmax; see Fig.7

−−

1

µA

VR =VRRMmax; Tj = 165 °C; see Fig.7

−−

100

µA

trr

reverse recovery time when switched from IF = 0.5 A to IR =1A;

measured at IR = 0.25 A; see Fig.10

−

3

−

µs

Cd

diode capacitance

VR = 0 V; f = 1 MHz; see Fig.8

−

21

−

pF

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-tp

thermal resistance from junction to tie-point

lead length = 10 mm

60

K/W

Rth j-a

thermal resistance from junction to ambient

note 1

120

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

类似零件编号 - BYD13K

制造商	部件名	数据表	功能描述
EIC discrete Semiconduc...	BYD13K	46Kb / 2P	CONTROLLED AVALANCHE RECTIFIER DIODES
Shenzhen Taychipst Elec...	BYD13K	3Mb / 3P	Controlled avalanche rectifiers

More results

类似说明 - BYD13K

制造商	部件名	数据表	功能描述
NXP Semiconductors	BYW54	46Kb / 7P	Controlled avalanche rectifiers 1996 Oct 03
	BAS11	42Kb / 7P	Controlled avalanche rectifiers 1996 Sep 26
	1N5059	74Kb / 7P	Controlled avalanche rectifiers 1996 Jun 19
Shenzhen Taychipst Elec...	BYG50D	4Mb / 3P	Controlled avalanche rectifiers
NXP Semiconductors	BYM56	48Kb / 7P	Controlled avalanche rectifiers 1996 May 24
	BYD11	46Kb / 7P	Controlled avalanche rectifiers 1996 Sep 26
	BYG50	41Kb / 6P	Controlled avalanche rectifiers 1996 May 24
New Jersey Semi-Conduct...	BYW54	136Kb / 2P	Controlled avalanche rectifiers
Shenzhen Taychipst Elec...	BYD13D	3Mb / 3P	Controlled avalanche rectifiers
NXP Semiconductors	BYD12	49Kb / 8P	Controlled avalanche rectifiers 1998 Dec 03