BY527 datasheet(3/7 Pages) PHILIPS

部件名	BY527

功能描述	Controlled avalanche rectifier

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制造商	PHILIPS [NXP Semiconductors]

网页	http://www.nxp.com

标志

3 / 7 page

1996 Jun 11

3

Philips Semiconductors

Product speciﬁcation

Controlled avalanche rectiﬁer

BY527

ELECTRICAL CHARACTERISTICS

Tj =25 °C; unless otherwise speciﬁed.

THERMAL CHARACTERISTICS

Note

1. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper

≥40 µm, see Fig.9.

For more information please refer to the

“General Part of associated Handbook”.

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

VF

forward voltage

IF =1A; Tj =Tj max; see Fig.6

−−

0.8

V

IF = 1 A; see Fig.6

−−

1.0

V

V(BR)R

reverse avalanche

breakdown voltage

IR = 0.1 mA

1250

−−

V

IR

reverse current

VR =VRWMmax; see Fig.7

−−

1

µA

VR =VRWMmax; Tj = 165 °C; see Fig.7

−−

150

µA

trr

reverse recovery time when switched from IF = 0.5 A to

IR = 1 A; measured at IR = 0.25 A;

see Fig.10

−

3

−

µs

Cd

diode capacitance

VR = 0 V; f = 1 MHz; see Fig.8

−

50

−

pF

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-tp

thermal resistance from junction to tie-point

lead length = 10 mm

46

K/W

Rth j-a

thermal resistance from junction to ambient

note 1

100

K/W

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