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CAT28C257P-15T 数据表(PDF) 7 Page - Catalyst Semiconductor

部件名 CAT28C257P-15T
功能描述  256K-Bit CMOS PARALLEL EEPROM
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制造商  CATALYST [Catalyst Semiconductor]
网页  http://www.catalyst-semiconductor.com
标志 CATALYST - Catalyst Semiconductor

CAT28C257P-15T 数据表(HTML) 7 Page - Catalyst Semiconductor

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CAT28C257
7
Doc. No. 1015, Rev. D
ADDRESS
CE
OE
WE
DATA OUT
tAS
DATA IN
DATA VALID
HIGH-Z
tAH
tWC
tOEH
tDH
tDS
tOES
tBLC
tCH
tCS
tCW
Page Write
The page write mode of the CAT28C257 (essentially an
extended BYTE WRITE mode) allows from 1 to 128
bytes of data to be programmed within a single EEPROM
write cycle. This effectively reduces the byte-write time
by a factor of 128.
Following an initial WRITE operation (WE pulsed low, for
tWP, and then high) the page write mode can begin by
issuing sequential WE pulses, which load the address
and data bytes into a128 byte temporary buffer. The
page address where data is to be written, specified by
bits A7 to A14, is latched on the last falling edge of WE.
Each byte within the page is defined by address bits A0
to A6 (which can be loaded in any order) during the first
and subsequent write cycles. Each successive byte load
cycle must begin within tBLC MAX of the falling edge of the
preceding WE pulse. There is no page write window
limitation as long as WE is pulsed low within tBLC MAX.
Upon completion of the page write sequence, WE must
stay high a minimum of tBLCMAX for the internal automatic
program cycle to commence. This programming cycle
consists of an erase cycle, which erases any data that
existed in each addressed cell, and a write cycle, which
writes new data back into the cell. A page write will only
write data to the locations that were addressed and will
not rewrite the entire page.
Figure 5. Byte Write Cycle [
CE
CE
CE
CE
CE Controlled]
Figure 6. Page Mode Write Cycle
OE
CE
WE
ADDRESS
I/O
tWP
tBLC
BYTE 0
BYTE 1
BYTE 2
BYTE n
BYTE n+1
BYTE n+2
LAST BYTE
tWC


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