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BY359-1500S 数据表(PDF) 3 Page - NXP Semiconductors |
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BY359-1500S 数据表(HTML) 3 Page - NXP Semiconductors |
3 / 5 page Philips Semiconductors Product specification Damper diode BY359-1500, BY359-1500S fast, high-voltage Fig.3. Maximum non-repetitive rms forward current. I F = f(tp); sinusoidal current waveform; Tj = 150˚C prior to surge with reapplied V RWM. Fig.4. Transient thermal impedance Z th = f(tp) Fig.5. BY359-1500 forward characteristic I F = f(VF); parameter T j Fig.6. BY359-1500S forward characteristic I F = f(VF); parameter T j 1ms 10ms 0.1s 1s 10s tp / s IFS(RMS) / A BY359 80 70 60 50 40 30 20 10 0 IFSM 0 30 20 10 0 1.0 2.0 IF / A VF / V max typ Tj=150C Tj=25C BY359 1us 10us 100us 1ms 10ms 100ms 1s 10s 0.001 0.01 0.1 1 10 BY359 pulse width, tp (s) Transient thermal impedance, Zth j-mb (K/W) D = tp tp T T P t D 0 30 20 10 0 1.0 2.0 IF / A VF / V max typ Tj=150C Tj=25C BY359S September 1998 3 Rev 1.300 |
类似零件编号 - BY359-1500S |
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类似说明 - BY359-1500S |
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