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PZTA44 数据表(PDF) 2 Page - Unisonic Technologies |
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PZTA44 数据表(HTML) 2 Page - Unisonic Technologies |
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2 / 4 page  UTCPZTA44/45 NPN EPITAXIAL SILICON TRANSISTOR UTC UNISONIC TECHNOLOGIES CO. LTD 2 QW-R207-003,A ELECTRICAL CHARACTERISTICS (Tj=25°C,unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Collector-base breakdown voltage PZTA44 PZTA45 BVCBO Ic=100 µA,IB=0 500 400 V Collector-emitter breakdown voltage PZTA44 PZTA45 BVCEO Ic=1mA,IB=0 400 350 V Emitter-base breakdown voltage BVEBO IE=100 µA,Ic=0 6 V Collector cut-off current PZTA44 PZTA45 ICBO VCB=400V,IE=0 VCB=320V,IE=0 0.1 0.1 µA Collector cut-off current PZTA44 PZTA45 ICES VCE=400V,IB=0 VCE=320V,IB=0 0.5 0.5 µA Emitter cut-off current IEBO VEB=4V,Ic=0 0.1 µA DC current gain(note) hFE VCE=10V,Ic=1mA VCE=10V,Ic=10mA VCE=10V,Ic=50mA VCE=10V,Ic=100mA 40 50 45 40 240 Collector-emitter saturation voltage VCE(sat) Ic=1mA,IB=0.1mA Ic=10mA,IB=1mA Ic=50mA,IB=5mA 0.4 0.5 0.75 V Base-emitter saturation voltage VBE(sat) Ic=10mA,IB=1mA 0.75 V Current gain bandwidth product fT VCE=20V,Ic=10mA, f=100MHz 50 MHz Output capacitance Cob VCB=20V,IE=0 f=1MHz 7 pF Note:Pulse test:PW<300 µs,Duty Cycle<2% |
类似零件编号 - PZTA44 |
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类似说明 - PZTA44 |
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