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2SC2688L-M-T60-C-K 数据表(PDF) 2 Page - Unisonic Technologies |
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2SC2688L-M-T60-C-K 数据表(HTML) 2 Page - Unisonic Technologies |
2 / 5 page 2SC2688 NPN EPITAXIAL SILICON TRANSISTOR UNISONICTECHNOLOGIESCO.,LTD 2 of 5 www.unisonic.com.tw QW-R204-023,A ABSOLUTE MAXIMUM RATING PARAMETER SYMBOL RATINGS UNIT Collector to Base Voltage VCBO 300 V Collector to Emitter Voltage VCEO 300 V Emitter to Base Voltage VEBO 5.0 V Collector Current IC 200 mA Ta=25℃ 1.25 W Total Power Dissipation TC=25℃ PD 10 W Junction Temperature TJ 150 ℃ Storage Temperature TSTG -55 ~ +150 ℃ Note Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (Ta=25℃) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Collector Saturation Voltage VCE(SAT) IC=20mA, IB=5.0mA 1.5 V Collector Cutoff Current ICBO VCB=200V, IE=0 100 nA Emitter Cutoff Current IEBO VEB=5.0V, IC=0 100 nA DC Current Gain hFE VCE=10V, IC=10mA 40 80 250 Gain Bandwidth Product fT VCE=30V, IE=-10mA 50 80 MHz Feedback Capacitance Cre VCB=30V, IE=0, f=1.0MHz 3 pF Note 1. * Pulsed PW ≤ 350µs, Duty Cycle ≤ 2% CLASSIFICATION OF hFE Rank N M L K Range 40 ~ 80 60 ~ 120 100 ~ 200 16 ~ 250 |
类似零件编号 - 2SC2688L-M-T60-C-K |
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类似说明 - 2SC2688L-M-T60-C-K |
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