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2SC2235 数据表(PDF) 2 Page - Unisonic Technologies |
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2SC2235 数据表(HTML) 2 Page - Unisonic Technologies |
2 / 4 page UTC2SC2235 NPN EPITAXIAL SILICON TRANSISTOR UTC UNISONIC TECHNOLOGIES CO. LTD 2 QW-R211-012,A TYPICAL CHARACTERISTIC hFE -Ic Collector Current Ic (mA) 3 10 30 100 10 30 50 100 300 300 1000 500 1000 Ic-VCE Collector Emitter Voltage VCE (V) 02 4 0 200 400 8 6 600 1000 800 10 12 14 Common Emitter Ta =25°C 0 2 IB=1mA 3 4 5 7 10 15 Ta=100°C Ta=-25°C Ta=25°C Common Emitter VCE=5V VCE(sat) -Ic Collector Current Ic (mA) 3 10 30 100 0.01 0.03 0.05 0.1 0.3 300 1000 0.5 Ta=100°C Ta=25°C Ta=-25°C Common Emitter Ic/IB =10 Ic-VBE Base Emitter Voltage VBE (V) 00.2 0.4 0 200 400 0.8 0.6 600 800 1.0 1.2 Ta=100°C Ta=25°C Ta= -25°C Safe Operating Area Collector Emitter Voltage VcE (V) 0.5 1 3 10 1 3 5 10 300 30 50 500 1000 5 100 3005001000 30 50 100 3000 1ms * 10ms * 100ms * Ic Max.(Pulse) * Ic Max. (Continous) DC Operation *Single Nonrepetitive Pulse Ta=25°C Curve must be derated linearly with increase in temperature Pc -Ta Ambient Temperature Ta(°C) 020 40 0 200 400 80 60 600 1000 800 100 120 140 160 Common Emitter VCE=5V |
类似零件编号 - 2SC2235 |
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类似说明 - 2SC2235 |
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