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2N7000 Datasheet(数据表) 1 Page - Unisonic Technologies

部件型号  2N7000
说明  N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
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制造商  UTC [Unisonic Technologies]
网页  http://www.utc-ic.com
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2N7000 Datasheet(HTML) 1 Page - Unisonic Technologies

   
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UTC 2N7000
MOSFET
UTC UNISONIC TECHNOLOGIES CO., LTD. 1
QW-R201-064,A
N-CHANNEL ENHANCEMENT
MODE FIELD EFFECT
TRANSISTOR
DESCRIPTION
The UTC 2N7000 has been designed to minimize
on-state resistance while provide rugged, reliable, and fast
switching performance. It can be used in most applications
requiring up to 400mA DC and can deliver pulsed currents
up to 2A. The product is particularly suited for low voltage,
low current applications such as small servo motor control,
power MOSFET gate drivers, and other switching
applications
FEATURES
*High density cell design for low RDS(ON)
*Voltage controlled small signal switch
*Rugged and reliable
*High saturation current capability
TO-92
1
1: SOURCE 2: GATE 3: DRAIN
ABSOLUTE MAXIMUM RATINGS ( Ta=25°C )
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
60
V
Drain-Gate Voltage(RGS≤1MΩ)
VDGR
60
V
Gate -Source Voltage-Continuous
-Non Repetitive (tp<50
µs)
VGSS
±20
±40
V
Maximum Drain Current-Continuous
-Pulsed
ID
115
800
mA
Maximum Power Dissipation
Derated above 25
°C
PD
400
3.2
mW
mW/
°C
Operating and Storage Temperature Range
TJ,TSTG
-55 to +150
°C
Maximum Lead Temperature for Soldering Purposes, 1/16” from Case
for 10 Seconds
TL
300
°C
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
RATINGS
UNIT
Thermal Resistance, Junction-to-Ambient
RθJA
312.5
°C/W




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