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数据搜索系统，热门电子元器件搜索 |
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数据搜索系统，热门电子元器件搜索 |
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2N7000 Datasheet(数据表) 4 Page - Unisonic Technologies |
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2N7000 Datasheet(HTML) 4 Page - Unisonic Technologies |
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4 page 
UTC 2N7000 MOSFET UTC UNISONIC TECHNOLOGIES CO., LTD. 4 QW-R201-064,A Figure7. Breakdown Voltage Varisation with Temperature Figure 8. Body Diode Forward Voltage Varisation with Temperature Figure9.Capacitance Characteristics Qg,GATE CHARGE(nC) Figure10. Gate Charge Characteristics Figure11 VGS RGEN VDD VIN RL VOUT DUT G D S Figure12. Switching Waveforms Pulse Width Input ,Vin Output ,Vout ton toff td(off) tr td(on) tf Inverted 10% 10% 10% 50% 50% 90% 90% 90% 2 0.8 0.4 VDS=25V 0 1.2 1.6 10 8 6 4 2 0 ID=500mA 280mA 115mA 100 75 0 -25 TJ,JUCTION TEMPERATURE (°C) 1.1 1.05 1 -50 0.925 25 50 125 0.95 1.025 1.075 0.975 150 ID=250μA 1 1.2 0.8 0.4 1 0.5 0.1 0.2 25°C -55°C 0.6 2 1.2 0.01 0.005 0.001 VGS=0V TJ=125°C VsD,BODY DIODE FORWARD VOLTAGE (V) VDS,DRAIN TO SOURCE VOLTAGE (V) 1 10 20 5 3 2 20 5 10 2 40 1 50 30 60 VGS=0V f=1MHz Ciss Coss Crss |
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