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2N7000 Datasheet(数据表) 4 Page - Unisonic Technologies

部件型号  2N7000
说明  N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
下载  5 Pages
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制造商  UTC [Unisonic Technologies]
网页  http://www.utc-ic.com
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2N7000 Datasheet(HTML) 4 Page - Unisonic Technologies

   
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UTC 2N7000
MOSFET
UTC UNISONIC TECHNOLOGIES CO., LTD. 4
QW-R201-064,A
Figure7. Breakdown Voltage Varisation
with Temperature
Figure 8. Body Diode Forward Voltage
Varisation with Temperature
Figure9.Capacitance Characteristics
Qg,GATE CHARGE(nC)
Figure10. Gate Charge Characteristics
Figure11
VGS
RGEN
VDD
VIN
RL
VOUT
DUT
G
D
S
Figure12. Switching Waveforms
Pulse Width
Input ,Vin
Output ,Vout
ton
toff
td(off)
tr
td(on)
tf
Inverted
10%
10%
10%
50%
50%
90%
90%
90%
2
0.8
0.4
VDS=25V
0
1.2
1.6
10
8
6
4
2
0
ID=500mA
280mA
115mA
100
75
0
-25
TJ,JUCTION TEMPERATURE (°C)
1.1
1.05
1
-50
0.925
25
50
125
0.95
1.025
1.075
0.975
150
ID=250μA
1
1.2
0.8
0.4
1
0.5
0.1
0.2
25°C
-55°C
0.6
2
1.2
0.01
0.005
0.001
VGS=0V
TJ=125°C
VsD,BODY DIODE FORWARD VOLTAGE (V)
VDS,DRAIN TO SOURCE VOLTAGE (V)
1
10
20
5
3
2
20
5
10
2
40
1
50
30
60
VGS=0V
f=1MHz
Ciss
Coss
Crss




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