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2N7000 Datasheet(数据表) 2 Page - Unisonic Technologies

部件型号  2N7000
说明  N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
下载  5 Pages
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制造商  UTC [Unisonic Technologies]
网页  http://www.utc-ic.com
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2N7000 Datasheet(HTML) 2 Page - Unisonic Technologies

   
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UTC 2N7000
MOSFET
UTC UNISONIC TECHNOLOGIES CO., LTD. 2
QW-R201-064,A
ELECTRICAL CHARACTERISTICS (T a =25°C, unless otherwise noted)
PARAMETER
SYMBOL
CONDITIONS.
MIN
TYP
MAX
UNITS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V,ID=10
µA
60
V
1
μ
A
Zero Gate Voltage Drain Current
IDSS
VDS=60V, VGS =0V
TJ=125
°C
0.5
mA
Gate-Body leakage, Forward
IGSSF
VGS =20V, VDS=0V
100
nA
Gate-Body leakage Reverse
IGSSR
VGS =-20V, VDS=0V
-100
nA
ON CHARACTERISTICS (Note)
Gate Threshold Voltage
VGS(th)
VDS =VGS , ID=250μA
1
2.1
2.5
V
Static Drain-Source On-Resistance
VGS =10V, ID=500mA
TJ=100
°C
1.2
1.7
7.5
13.5
RDS(ON)
VGS =5.0V, ID=50mA
TJ=100
°C
1.7
2.4
7.5
13.5
VGS = 10V, ID=500mA
0.6
3.75
Drain-Source On-Voltage
VDS(ON)
VGS = 5.0V, ID=50mA
0.09
1.5
V
On-State Drain Current
ID(ON)
VGS=10V, VDS≧2VDS(on)
500
2700
mA
Forward Transconductance
gFS
VDS≧2VDS(on), ID=200mA
80
320
mS
DYNAMIC CHARACTERISTICS
Input Capacitance
Ciss
20
50
pF
Output Capacitance
Coss
11
25
pF
Reverse Transfer Capacitance
Crss
VDS=25V,VGS=0V,
f=1.0MHz
4
5
pF
Turn-On Time
ton
VDD=30V, RL=150Ω,
ID=200mA, VGS=10V,
RGEN=25Ω
20
ns
Turn-Off Time
toff
VDD=30V, RL=150Ω,
ID=200mA, VGS=10V,
RGEN=25Ω
20
ns
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Maximum Continuous Drain-Source
Diode Forward Current
Is
115
mA
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
0.8
A
Drain-Source Diode Forward Voltage
VSD
VGS=0V, Is=115mA(Note )
0.88
1.5
V
Note: Pulse Test: Pulse Width≤300μs, Duty Cycle≤2.0%




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