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2N7000 Datasheet(数据表) 2 Page - Unisonic Technologies |
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2N7000 Datasheet(HTML) 2 Page - Unisonic Technologies |
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2 page 
UTC 2N7000 MOSFET UTC UNISONIC TECHNOLOGIES CO., LTD. 2 QW-R201-064,A ELECTRICAL CHARACTERISTICS (T a =25°C, unless otherwise noted) PARAMETER SYMBOL CONDITIONS. MIN TYP MAX UNITS OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS=0V,ID=10 µA 60 V 1 μ A Zero Gate Voltage Drain Current IDSS VDS=60V, VGS =0V TJ=125 °C 0.5 mA Gate-Body leakage, Forward IGSSF VGS =20V, VDS=0V 100 nA Gate-Body leakage Reverse IGSSR VGS =-20V, VDS=0V -100 nA ON CHARACTERISTICS (Note) Gate Threshold Voltage VGS(th) VDS =VGS , ID=250μA 1 2.1 2.5 V Static Drain-Source On-Resistance VGS =10V, ID=500mA TJ=100 °C 1.2 1.7 7.5 13.5 RDS(ON) VGS =5.0V, ID=50mA TJ=100 °C 1.7 2.4 7.5 13.5 Ω VGS = 10V, ID=500mA 0.6 3.75 Drain-Source On-Voltage VDS(ON) VGS = 5.0V, ID=50mA 0.09 1.5 V On-State Drain Current ID(ON) VGS=10V, VDS≧2VDS(on) 500 2700 mA Forward Transconductance gFS VDS≧2VDS(on), ID=200mA 80 320 mS DYNAMIC CHARACTERISTICS Input Capacitance Ciss 20 50 pF Output Capacitance Coss 11 25 pF Reverse Transfer Capacitance Crss VDS=25V,VGS=0V, f=1.0MHz 4 5 pF Turn-On Time ton VDD=30V, RL=150Ω, ID=200mA, VGS=10V, RGEN=25Ω 20 ns Turn-Off Time toff VDD=30V, RL=150Ω, ID=200mA, VGS=10V, RGEN=25Ω 20 ns DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Maximum Continuous Drain-Source Diode Forward Current Is 115 mA Maximum Pulsed Drain-Source Diode Forward Current ISM 0.8 A Drain-Source Diode Forward Voltage VSD VGS=0V, Is=115mA(Note ) 0.88 1.5 V Note: Pulse Test: Pulse Width≤300μs, Duty Cycle≤2.0% |
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