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SB2202-TN3-T 数据表(PDF) 2 Page - Unisonic Technologies |
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SB2202-TN3-T 数据表(HTML) 2 Page - Unisonic Technologies |
2 / 4 page SB2202 PNP EPITAXIAL SILICON TRANSISTOR UNISONICTECHNOLOGIESCO.,LTD 2 of 4 www.unisonic.com.tw QW-R209-020,A ABSOLUTE MAXIMUM RATINGS (Ta=25°C , unless otherwise specified ) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -30 V Emitter-Base Voltage VEBO -5 V Base Current IB -0.6 A DC IC -3 Collector Current PULSE ICM -7 A Tc=25 °C 10 Collector Dissipation Ta=25 °C Pc 1 W Junction Temperature TJ +150 °C Storage Temperature TSTG -40 ~ +150 °C ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified.) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Collector-Emitter Saturation Voltage VCE(sat) IC =-2A, IB= -0.2A -0.3 -0.5 V Base-Emitter Saturation Voltage VBE(sat) IC = -2A, IB= -0.2A -1.0 -2.0 V Collector Cut-Off Current ICBO VCB= -30V, IE=0 1 mA Emitter Cut-Off Current IEBO VEB= -3V, IC =0 1 mA DC Current Gain(Note 1) hFE1 hFE2 VCE= -2V, IC = -20mA VCE= -2V, IC = -1A 30 100 200 400 Current Gain Bandwidth Product fT VCE= -5V, IC = -0.1A 80 MHz Output Capacitance Cob VCB= -10V, IE=0, f=1MHz 45 pF Note 1: Pulse test: PW<300 µs, Duty Cycle<2% CLASSIFICATION OF hFE2 RANK Q P E RANGE 100 ~ 200 160 ~ 320 200 ~ 400 |
类似零件编号 - SB2202-TN3-T |
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类似说明 - SB2202-TN3-T |
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