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S8550 Datasheet(数据表) 2 Page - Unisonic Technologies

部件型号  S8550
说明  LOW VOLTAGE HIGH CURRENT SMALL SIGNAL PNP TRANSISTOR
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制造商  UTC [Unisonic Technologies]
网页  http://www.utc-ic.com
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S8550 Datasheet(HTML) 2 Page - Unisonic Technologies

   
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UTC S8550
PNP EPITAXIAL SILICON TRANSISTOR
UTC UNISONIC TECHNOLOGIES CO., LTD. 2
QW-R201-014,A
CLASSIFICATION OF hFE2
RANK
C
D
E
RANGE
120-200
160-300
280-400
TYPICAL PERFORMANCE CHARACTERISTICS
Fig.1 Static characteristics
Collector-Emitter voltage ( V)
0
0.4
0.8
1.2
1.6
2.0
0
0.1
0.2
0.3
0.4
0.5
IB=0.5mA
IB=1.0mA
IB=1.5mA
IB=2.0mA
IB=2.5mA
IB=3.0mA
Fig.2 DC current Gain
Ic,Collector current (mA)
10
2
10
1
10
0
10
3
10
3
10
2
10
1
10
0
10
-1
VCE=1V
Fig.3 Base-Emitter on Voltage
10
-1
10
0
10
1
10
2
Base-Emitter voltage (V)
0
0.2
0.4
0.6
0.8
1.0
VCE=1V
Ic,Collector current (mA)
10
3
10
2
10
1
10
0
10
-1
10
1
10
2
10
3
10
4
Fig.4 Saturation voltage
Fig.5 Current gain-bandwidth
product
Fig.6 Collector output
Capacitance
VCE(sat)
VBE(sat)
Ic=10*IB
Ic,Collector current (mA)
10
0
10
1
10
2
10
3
10
0
10
1
10
2
VCE=10V
Collector-Base voltage (V)
10
3
10
3
10
0
10
1
10
2
10
0
10
1
10
2
10
3
f=1MHz
IE=0
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.




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