数据搜索系统,热门电子元器件搜索
  Chinese▼

Delete All
ON OFF
ALLDATASHEETCN.COM

X  

预览 PDF Download HTML

MJE13003 Datasheet(数据表) 1 Page - ON Semiconductor

部件型号  MJE13003
说明  SWITCHMODE TM Series NPN Silicon Power Transistor 300 AND 400 VOLTS 40 WATTS
下载  8 Pages
Scroll/Zoom Zoom In 100% Zoom Out
制造商  ONSEMI [ON Semiconductor]
网页  http://www.onsemi.com
标志 

MJE13003 Datasheet(HTML) 1 Page - ON Semiconductor

   
Zoom Inzoom in Zoom Outzoom out
 1 page
background image
© Semiconductor Components Industries, LLC, 2006
January, 2006 − Rev. 2
1
Publication Order Number:
MJE13003/D
MJE13003
SWITCHMODEt Series NPN
Silicon Power Transistor
These devices are designed for high−voltage, high−speed power
switching inductive circuits where fall time is critical. They are
particularly suited for 115 and 220 V SWITCHMODE applications
such as Switching Regulators, Inverters, Motor Controls,
Solenoid/Relay drivers and Deflection circuits.
Features
Reverse Biased SOA with Inductive Loads @ TC = 100_C
Inductive Switching Matrix 0.5 to 1.5 A, 25 and 100_C
tc @ 1 A, 100_C is 290 ns (Typ)
700 V Blocking Capability
SOA and Switching Applications Information
Pb−Free Package is Available*
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−Emitter Voltage
VCEO(sus)
400
Vdc
Collector−Emitter Voltage
VCEV
700
Vdc
Emitter Base Voltage
VEBO
9
Vdc
Collector Current
− Continuous
− Peak (Note 1)
IC
ICM
1.5
3
Adc
Base Current
− Continuous
− Peak (Note 1)
IB
IBM
0.75
1.5
Adc
Emitter Current
− Continuous
− Peak (Note 1)
IE
IEM
2.25
4.5
Adc
Total Power Dissipation @ TA = 25_C
Derate above 25
_C
PD
1.4
11.2
W
mW/
_C
Total Power Dissipation @ TC = 25_C
Derate above 25
_C
PD
40
320
W
mW/
_C
Operating and Storage Junction
Temperature Range
TJ, Tstg
–65 to
+150
_C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Case
RqJC
3.12
_C/W
Thermal Resistance, Junction−to−Ambient
RqJA
89
_C/W
Maximum Load Temperature for Soldering
Purposes: 1/8
″ from Case for 5 Seconds
TL
275
_C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle
≤ 10%.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Device
Package
Shipping
ORDERING INFORMATION
MJE13003
TO−225
500 Units/Box
1.5 AMPERES
NPN SILICON POWER
TRANSISTORS
300 AND 400 VOLTS
40 WATTS
http://onsemi.com
MJE13003G
TO−225
(Pb−Free)
500 Units/Box
TO−225
CASE 77
STYLE 3
2 1
3
MARKING DIAGRAM
YWW
JE
13003G
Y
= Year
WW
= Work Week
JE13003
= Device Code
G
= Pb−Free Package
1 BASE
2 COLLECTOR
3 EMITTER




HTML 页

1  2  3  4  5  6  7  8 


数据表 下载




链接网址


Privacy Policy
ALLDATASHEETCN.COM
ALLDATASHEET是否为您带来帮助?  [ DONATE ]  

关于 Alldatasheet    |   广告服务   |   联系我们   |   隐私政策   |   书签   |   链接交换   |   制造商名单
All Rights Reserved© Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  , Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp  |   Russian : Alldatasheetru.com
Korean : Alldatasheet.co.kr   |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com  |   Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl