MJE800G datasheet(3/6 Pages) ONSEMI

部件名	MJE800G

功能描述	4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT

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制造商	ONSEMI [ON Semiconductor]

网页	http://www.onsemi.com

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MJE700, MJE702, MJE703 (PNP) − MJE800, MJE802, MJE803 (NPN)

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3

0.04

0.2

2.0

0.1

0.06

0.4

1.0

4.0

IC, COLLECTOR CURRENT (AMP)

2.0

1.0

0.8

0.6

0.4

0.2

ts

Figure 2. Switching Times Test Circuit

tr

td @ VBE(off) = 0

PNP

NPN

4.0

0.6

Figure 3. Switching Times

V2

APPROX

+8.0 V

0

≈ 6.0 k

SCOPE

VCC

−30 V

RC

51

For td and tr, D1 id disconnected

and V2 = 0, RB and RC are varied

to obtain desired test currents.

For NPN test circuit, reverse diode,

polarities and input pulses.

25

ms

tr, tf ≤ 10 ns

DUTY CYCLE = 1.0%

+ 4.0 V

RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS

D1, MUST BE FAST RECOVERY TYPE, e.g.:

1N5825 USED ABOVE IB ≈ 100 mA

MSD6100 USED BELOW IB ≈ 100 mA

V1

APPROX

−12 V

TUT

RB

D1

≈ 150

tf

VCC = 30 V

IC/IB = 250

IB1 = IB2

TJ = 25°C

t, TIME (ms)

1.0

0.01

0.5

0.2

0.1

0.05

0.02

0.05

1.0

2.0

5.0

10

20

50

100

200

1000

500

qJC(t) = r(t) qJC

qJC = 3.12°C/W MAX

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) − TC = P(pk) qJC(t)

P(pk)

t1

t2

DUTY CYCLE, D = t1/t2

D = 0.5

0.2

0.05

0.01

SINGLE PULSE

0.1

0.7

0.3

0.07

0.03

0.02

0.1

0.5

0.2

Figure 4. Thermal Response (MJE700, 800 Series)

0.03

3.0

30

300

0.3

10

VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)

0.1

100

2.0

5.0

0.5

Figure 5. MJE700 Series

MJE702, 703

MJE700

dc

1.0

3.0

1.0ms

70

50

30

20

10

7.0

5.0

100

ms

TJ = 150°C

VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)

0.1

Figure 6. MJE800 Series

100

70

50

30

20

10

7.0

5.0

0.2

0.7

0.3

7.0

10

2.0

5.0

0.5

1.0

3.0

0.2

0.7

0.3

7.0

5.0ms

BONDING WIRE LIMITED

THERMALLY LIMITED

@ TC = 25°C (SINGLE PULSE)

SECOND BREAKDOWN LIMITED

100

ms

1.0ms

5.0ms

dc

TJ = 150°C

BONDING WIRE LIMITED

THERMALLY LIMITED

@ TC = 25°C (SINGLE PULSE)

SECOND BREAKDOWN LIMITED

MJE802, 803

MJE800

ACTIVE−REGION SAFE−OPERATING AREA

There are two limitations on the power handling ability of

a transistor: average junction temperature and second

breakdown. Safe operating area curves indicate IC − VCE

limits of the transistor that must be observed for reliable

operation; i.e., the transistor must not be subjected to greater

dissipation than the curves indicate.

The data of Figures 5 and 6 are based on TJ(pk) = 150_C;

TC is variable depending on conditions. Second breakdown

pulse limits are valid for duty cycles to 10% provided TJ(pk)

< 150

_C. TJ(pk) may be calculated from the data in Figure 4.

At high case temperatures, thermal limitations will reduce

the power that can be handled to values less than the

limitations imposed by second breakdown.

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