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MJ15011G 数据表(PDF) 1 Page - ON Semiconductor |
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MJ15011G 数据表(HTML) 1 Page - ON Semiconductor |
1 / 4 page © Semiconductor Components Industries, LLC, 2005 December, 2005 − Rev. 3 1 Publication Order Number: MJ15011/D MJ15011(NPN), MJ15012(PNP) Preferred Devices Complementary Silicon Power Transistors The MJ15011 and MJ15012 are PowerBase power transistors designed for high−power audio, disk head positioners, and other linear applications. These devices can also be used in power switching circuits such as relay or solenoid drivers, dc−to−dc converters or inverters. • High Safe Operating Area (100% Tested) 1.2 A @ 100 V • Completely Characterized for Linear Operation • High DC Current Gain and Low Saturation Voltage hFE = 20 (Min) @ 2 A, 2 V VCE(sat) = 2.5 V (Max) @ IC = 4 A, IB = 0.4 A • For Low Distortion Complementary Designs • Pb−Free Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage VCEO 250 Vdc Collector−Emitter Voltage VCEX 250 Vdc Emitter−Base Voltage VEB 5 Vdc Collector Current − Continuous − Peak (Note 1) IC ICM 10 15 Adc Base Current − Continuous − Peak (Note 1) IB IBM 2 5 Adc Emitter Current − Continuous − Peak (Note 1) IE IEM 12 20 Adc Total Power Dissipation @ TC = 25_C Derate above 25 _C PD 200 1.14 Watts W/ _C Operating and Storage Junction Temperature Range TJ, Tstg – 65 to + 200 _C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Case RθJC 0.875 _C/W Maximum Lead Temperature for Soldering Purposes TL 265 _C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Pulse Test: Pulse Width = 5 ms, Duty Cycle v 10%. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 10 AMPERE COMPLEMENTARY POWER TRANSISTORS 250 VOLTS 200 WATTS http://onsemi.com Preferred devices are recommended choices for future use and best overall value. Device Package Shipping ORDERING INFORMATION MJ15011 TO−204AA 100 Units/Tray TO−204AA MJ15012 TO−204AA (Pb−Free) MJ15012G MJ15011G TO−204AA (Pb−Free) 100 Units/Tray 100 Units/Tray 100 Units/Tray MARKING DIAGRAM MJ1501x = Device Code x = 1 or 2 G = Pb−Free Package A = Location Code YY = Year WW = Work Week MEX = Country of Orgin MJ1501xG AYYWW MEX TO−204AA (TO−3) CASE 1−07 STYLE 1 |
类似零件编号 - MJ15011G |
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类似说明 - MJ15011G |
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