数据搜索系统,热门电子元器件搜索
  Chinese▼

Delete All
ON OFF
ALLDATASHEETCN.COM

X  

预览 PDF Download HTML

MBT35200MT1_05 Datasheet(数据表) 1 Page - ON Semiconductor

部件型号  MBT35200MT1
说明  High Current Surface Mount PNP Silicon Switching Transistor for Load Management in Portable Applications
下载  6 Pages
Scroll/Zoom Zoom In 100% Zoom Out
制造商  ONSEMI [ON Semiconductor]
网页  http://www.onsemi.com
标志 ONSEMI - ON Semiconductor

MBT35200MT1 Datasheet(HTML) 1 Page - ON Semiconductor

  MBT35200MT1_05 数据表 HTML 1Page - ON Semiconductor MBT35200MT1_05 数据表 HTML 2Page - ON Semiconductor MBT35200MT1_05 数据表 HTML 3Page - ON Semiconductor MBT35200MT1_05 数据表 HTML 4Page - ON Semiconductor MBT35200MT1_05 数据表 HTML 5Page - ON Semiconductor MBT35200MT1_05 数据表 HTML 6Page - ON Semiconductor  
Zoom Inzoom in Zoom Outzoom out
 1 page
background image
© Semiconductor Components Industries, LLC, 2005
June, 2005 − Rev. 2
1
Publication Order Number:
MBT35200MT1/D
MBT35200MT1
High Current Surface
Mount PNP Silicon
Switching Transistor for
Load Management in
Portable Applications
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
Max
Unit
Collector-Emitter Voltage
VCEO
−35
Vdc
Collector-Base Voltage
VCBO
−55
Vdc
Emitter-Base Voltage
VEBO
−5.0
Vdc
Collector Current − Continuous
IC
−2.0
Adc
Collector Current − Peak
ICM
−5.0
A
Electrostatic Discharge
ESD
HBM Class 3
MM Class C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation
TA = 25°C
Derate above 25
°C
PD (Note 1)
625
5.0
mW
mW/
°C
Thermal Resistance,
Junction−to−Ambient
RqJA (Note 1)
200
°C/W
Total Device Dissipation
TA = 25°C
Derate above 25
°C
PD (Note 2)
1.0
8.0
W
mW/
°C
Thermal Resistance,
Junction−to−Ambient
RqJA (Note 2)
120
°C/W
Thermal Resistance,
Junction−to−Lead #1
RqJL
80
°C/W
Total Device Dissipation
(Single Pulse < 10 sec.)
PDsingle
(Notes 2 & 3)
1.75
W
Junction and Storage
Temperature Range
TJ, Tstg
−55 to
+150
°C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. FR− 4 @ Minimum Pad
2. FR− 4 @ 1.0 X 1.0 inch Pad
3. ref: Figure 9
http://onsemi.com
CASE 318G
TSOP−6
STYLE 6
MARKING
DIAGRAM
COLLECTOR
1, 2, 5, 6
3
BASE
4
EMITTER
35 VOLTS
2.0 AMPS
PNP TRANSISTOR
1
G4M
G
G
1
M
= Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
Device
Package
Shipping
ORDERING INFORMATION
MBT35200MT1
TSOP−6
3000/Tape & Reel
MBT35200MT1G
TSOP−6
(Pb−Free)
3000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.




HTML 页

1  2  3  4  5  6 


数据表 下载

Go To PDF Page


链接网址


Privacy Policy
ALLDATASHEETCN.COM
ALLDATASHEET是否为您带来帮助?  [ DONATE ]  

关于 Alldatasheet    |   广告服务   |   联系我们   |   隐私政策   |   书签   |   链接交换   |   制造商名单
All Rights Reserved© Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  , Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp  |   Russian : Alldatasheetru.com
Korean : Alldatasheet.co.kr   |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com  |   Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl