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BU323Z 数据表(PDF) 2 Page - ON Semiconductor |
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BU323Z 数据表(HTML) 2 Page - ON Semiconductor |
2 / 7 page BU323Z http://onsemi.com 2 ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS (1) Collector−Emitter Clamping Voltage (IC = 7.0 A) (TC = −40°C to +125°C) VCLAMP 350 — 450 Vdc Collector−Emitter Cutoff Current (VCE = 200 V, IB = 0) ICEO — — 100 μAdc Emitter−Base Leakage Current (VEB = 6.0 Vdc, IC = 0) IEBO — — 50 mAdc ON CHARACTERISTICS (1) Base−Emitter Saturation Voltage (IC = 8.0 Adc, IB = 100 mAdc) (IC = 10 Adc, IB = 0.25 Adc) VBE(sat) — — — — 2.2 2.5 Vdc Collector−Emitter Saturation Voltage (IC = 7.0 Adc, IB = 70 mAdc) (TC = 125°C) (IC = 8.0 Adc, IB = 0.1 Adc) (TC = 125°C) (IC = 10 Adc, IB = 0.25 Adc) VCE(sat) — — — — — — — — — — 1.6 1.8 1.8 2.1 1.7 Vdc Base−Emitter On Voltage (IC = 5.0 Adc, VCE = 2.0 Vdc) (TC = −40°C to +125°C) (IC = 8.0 Adc, VCE = 2.0 Vdc) VBE(on) 1.1 1.3 — — 2.1 2.3 Vdc Diode Forward Voltage Drop (IF = 10 Adc) VF — — 2.5 Vdc DC Current Gain (IC = 6.5 Adc, VCE = 1.5 Vdc) (TC = −40°C to +125°C) (IC = 5.0 Adc, VCE = 4.6 Vdc) hFE 150 500 — — — 3400 — DYNAMIC CHARACTERISTICS Current Gain Bandwidth (IC = 0.2 Adc, VCE = 10 Vdc, f = 1.0 MHz) fT — — 2.0 MHz Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Cob — — 200 pF Input Capacitance (VEB = 6.0 V) Cib — — 550 pF CLAMPING ENERGY (see notes) Repetitive Non−Destructive Energy Dissipated at turn−off: (IC = 7.0 A, L = 8.0 mH, RBE = 100 Ω) (see Figures 2 and 4) WCLAMP 200 — — mJ SWITCHING CHARACTERISTICS: Inductive Load (L = 10 mH) Fall Time (IC = 6.5 A, IB1 = 45 mA, VBE(off) = 0, RBE(off) = 0, VCC = 14 V, VZ = 300 V) tfi — 625 — ns Storage Time tsi — 10 30 μs Cross−over Time tc — 1.7 — μs (1) Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle = 2.0%. |
类似零件编号 - BU323Z |
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类似说明 - BU323Z |
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