DAN222_06 datasheet(1/4 Pages) ONSEMI

部件名	DAN222

功能描述	Common Cathode Silicon Dual Switching Diode

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制造商	ONSEMI [ON Semiconductor]

网页	http://www.onsemi.com

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March, 2006 − Rev. 4

1

Publication Order Number:

DAN222/D

DAN222

Common Cathode Silicon

Dual Switching Diode

This Common Cathode Silicon Epitaxial Planar Dual Diode is

designed for use in ultra high speed switching applications. This

device is housed in the SOT−416/SC−90 package which is designed

for low power surface mount applications, where board space is at a

premium.

Features

• Fast trr

• Low CD

• Pb−Free Packages are Available

MAXIMUM RATINGS (TA = 25°C)

Rating

Symbol

Value

Unit

Reverse Voltage

VR

80

Vdc

Peak Reverse Voltage

VRM

80

Vdc

Forward Current

IF

100

mAdc

Peak Forward Current

IFM

300

mAdc

Peak Forward Surge Current (Note 1)

IFSM

2.0

Adc

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Power Dissipation

PD

150

mW

Junction Temperature

TJ

150

°C/W

Storage Temperature Range

Tstg

−55 to +150

°C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. t = 1

mS

http://onsemi.com

Device

Package

Shipping†

ORDERING INFORMATION

SC−75/SOT−416

CASE 463

STYLE 3

DAN222

SC−75/SOT−416 3000/Tape & Reel

CATHODE

3

12

ANODE

1

DAN222T1

3000/Tape & Reel

DAN222T1G

3000/Tape & Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

N9 M

G

N9

= Specific Device Code

M

= Date Code*

G

= Pb−Free Package

1

MARKING DIAGRAM

(Note: Microdot may be in either location)

*Date Code orientation may vary depending

upon manufacturing location.

DAN222G

SC−75/SOT−416

(Pb−Free)

3000/Tape & Reel

SC−75/SOT−416

(Pb−Free)

类似零件编号 - DAN222_06

制造商	部件名	数据表	功能描述
Jiangsu Changjiang Elec...	DAN2222E	301Kb / 3P	SWITCHING DIODE
ON Semiconductor	DAN222G	125Kb / 4P	Common Cathode Silicon Dual Switching Diode October, 2010 -- Rev. 6
ON Semiconductor	DAN222G	165Kb / 5P	Common Cathode Silicon Dual Switching Diode September, 2013 - Rev. 7
Micro Commercial Compon...	DAN222M	318Kb / 2P	100 mA Switching Diode 80 Volts
Galaxy Semi-Conductor H...	DAN222M	124Kb / 3P	Switching diode

More results

类似说明 - DAN222_06

制造商	部件名	数据表	功能描述
Leshan Radio Company	LDAN222T1G	223Kb / 3P	Common Cathode Silicon Dual Switching Diode
ON Semiconductor	M1MA141WKT1	50Kb / 4P	Common Cathode Silicon Dual Switching Diode November, 2005 ??Rev. 7
	DAN222M3T5G	94Kb / 4P	Common Cathode Silicon Dual Switching Diode January, 2013 ??Rev. 6
	DAN222	165Kb / 5P	Common Cathode Silicon Dual Switching Diode September, 2013 - Rev. 7
	DAN222G	125Kb / 4P	Common Cathode Silicon Dual Switching Diode October, 2010 -- Rev. 6
	M1MA141WKT1G	133Kb / 4P	Common Cathode Silicon Dual Switching Diode November, 2011 ??Rev. 9
First Silicon Co., Ltd	FDS222	106Kb / 4P	Common Cathode Silicon Dual Switching Diode
Leshan Radio Company	LDAN222T1	143Kb / 3P	Common Cathode Silicon Dual Switching Diode
	LDAN222T1G	168Kb / 4P	Common Cathode Silicon Dual Switching Diode
	LM1MA141WKT1	101Kb / 4P	Common Cathode Silicon Dual Switching Diode