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STN888 Datasheet(数据表) 3 Page - STMicroelectronics

部件型号  STN888
说明  HIGH CURRENT, HIGH PERFORMANCE, LOW VOLTAGE PNP TRANSISTOR
下载  9 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
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STN888 Datasheet(HTML) 3 Page - STMicroelectronics

   
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STN888
2 Electrical Characteristics
3/9
2
Electrical Characteristics
(TCASE = 25°C; unless otherwise specified)
Table 3.
Electrical Characteristics
Note: 1 Pulsed duration = 300
μs, duty cycle 1.5%.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ICBO
Collector Cut-off Current
(IE = 0)
VCB = -30V
VCB = -30V
____TC = 100°C
-10
-100
μA
μA
IEBO
Emitter Cut-off Current
(IC = 0)
VEB = -6V
-10
μA
V(BR)CEO
Note: 1
Collector-Emitter
Breakdown Voltage (IB = 0)
IC = -10mA
-30
V
V(BR)CBO
Collector-Base
Breakdown Voltage (IE = 0)
IC = -100μA
-45
V
V(BR)EBO
Emitter-Base
Breakdown Voltage (IC = 0)
IE = -100μA
-6
V
VCE(sat)
Note: 1
Collector-Emitter Saturation
Voltage
IC = -500mA_____ IB = -5mA
IC = -2A_____
IB = -50mA
IC = -5A_____
IB = -250mA
IC = -6A_
____ IB = -250mA
IC = -8A _____
IB = -400mA
IC = -10A ___
__ IB = -500mA
-0.7
-1.0
-1.2
-0.15
-0.35
-0.70
V
V
V
V
V
V
VBE(sat)
Note: 1
Base-Emitter Saturation Voltage
IC = -2A ____
IB = -50mA
IC = -6A ____
IB = -250mA
-1.2
-1.1
V
V
hFE
Note: 1
DC Current Gain
IC = -10mA
VCE = -1 V 120
200
IC = -500mA
VCE = -1 V 100
200
300
IC = -5 A
VCE = -1 V 70
100
IC = -5 A VCE = -1 V tj = 100°C
100
IC = -8 A
VCE = -1 V
55
IC = -10 A
VCE = -1 V
35
td
tr
ts
tf
INDUCTIVE LOAD
Delay Time
Rise Time
Storage Time
Fall Time
IC = -3A ____ _
VCC = -20V
IB1 = -IB2 =-60mA
(see Figure 7)
180
160
250
80
220
210
300
100
ns
ns
ns
ns




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