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KM44C16100B 数据表(PDF) 4 Page - Samsung semiconductor

部件名 KM44C16100B
功能描述  16M x 4bit CMOS Dynamic RAM with Fast Page Mode
Download  20 Pages
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制造商  SAMSUNG [Samsung semiconductor]
网页  http://www.samsung.com/Products/Semiconductor
标志 SAMSUNG - Samsung semiconductor

KM44C16100B 数据表(HTML) 4 Page - Samsung semiconductor

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KM44C16000B, KM44C16100B
CMOS DRAM
*Note :
ICC1, ICC3, ICC4 and ICC6 are dependent on output loading and cycle rates. Specified values are obtained with the output open.
ICC is specified as an average current. In ICC1, ICC3 and ICC6, address can be changed maximum once while RAS=VIL. In ICC4,
address can be changed maximum once within one fast page mode cycle time,
tPC.
DC AND OPERATING CHARACTERISTICS (Continued)
ICC1* : Operating Current (RAS and CAS, Address cycling @
tRC=min.)
ICC2 : Standby Current (RAS=CAS=W=VIH)
ICC3* : RAS-only Refresh Current (CAS=VIH, RAS, Address cycling @
tRC=min.)
ICC4* : Fast Page Mode Current (RAS=VIL, CAS, Address cycling @
tPC=min.)
ICC5 : Standby Current (RAS=CAS=W=VCC-0.2V)
ICC6* : CAS-Before-RAS Refresh Current (RAS and CAS cycling @
tRC=min)
Symbol
Power
Speed
Max
Units
KM44C16000B
KM44C16100B
ICC1
Don
′t care
-45
-5
-6
100
90
80
130
120
110
mA
mA
mA
ICC2
Normal
Don
′t Care
2
2
mA
ICC3
Don
′t care
-45
-5
-6
100
90
80
130
120
110
mA
mA
mA
ICC4
Don
′t care
-45
-5
-6
70
60
50
80
70
60
mA
mA
mA
ICC5
Normal
Don
′t Care
1
1
mA
ICC6
Don
′t care
-45
-5
-6
100
90
80
130
120
110
mA
mA
mA


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