IRF511 datasheet(6/7 Pages) HARRIS

部件名	IRF511

功能描述	4.9A, and 5.6A, 80V and 100V, 0.54 and 0.74 Ohm, N-Channel Power MOSFETs

Download	7 Pages

Scroll/Zoom	100%

制造商	HARRIS [Harris Corporation]

网页	http://www.harris.com

标志

6 / 7 page

5-6

IRF510, IRF511, IRF512, IRF513

FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT

FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE

FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE

Typical Performance Curves Unless Otherwise Speciﬁed (Continued)

ID, DRAIN CURRENT (A)

24

6

8

010

2.5

2.0

1.5

0

1.0

80

µs PULSE TEST

0.5

VDS ≥ 50V

TJ = 175

oC

TJ = 25

oC

TJ = 175

oC

TJ = 25

oC

VSD, SOURCE TO DRAIN VOLTAGE (V)

100

10

1

0.1

0

0.4

0.8

1.2

1.6

2.0

Qg(TOT), TOTAL GATE CHARGE (nC)

24

68

010

20

16

12

0

8

VDS = 80V

4

VDS = 50V

VDS = 20V

ID = 3.4A

类似零件编号 - IRF511

制造商	部件名	数据表	功能描述
Supertex, Inc	IRF511	70Kb / 2P	N-Channel Enhancement-Mode Vertical DMOS Power FETs
Fairchild Semiconductor	IRF511	151Kb / 5P	N-Channel Power MOSFETs, 5.5 A, 60-100V
Inchange Semiconductor ...	IRF511	45Kb / 2P	isc N-Channel Mosfet Transistor
ARTSCHIP ELECTRONICS CO...	IRF511	374Kb / 5P	N-Channel Power Mosfets
List of Unclassifed Man...	IRF511	2Mb / 31P	SEMICONDUCTORS

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类似说明 - IRF511

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