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BUK483-60A 数据表(PDF) 4 Page - NXP Semiconductors |
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BUK483-60A 数据表(HTML) 4 Page - NXP Semiconductors |
4 / 8 page Philips Semiconductors Product specification PowerMOS transistor BUK483-60A Fig.7. Typical transfer characteristics. I D = f(VGS) ; conditions: VDS = 25 V; parameter Tj Fig.8. Typical transconductance, T j = 25 ˚C. g fs = f(ID); conditions: VDS = 25 V Fig.9. Normalised drain-source on-state resistance. a = R DS(ON)/RDS(ON)25 ˚C = f(Tj); ID = 3.2 A; VGS = 10 V Fig.10. Gate threshold voltage. V GS(TO) = f(Tj); conditions: ID = 1 mA; VDS = VGS Fig.11. Sub-threshold drain current. I D = f(VGS); conditions: Tj = 25 ˚C; VDS = VGS Fig.12. Typical capacitances, C iss, Coss, Crss. C = f(V DS); conditions: VGS = 0 V; f = 1 MHz 0 2 4 6 8 10 10 9 8 7 6 5 4 3 2 1 0 ID / A VGS / V Tj / C = 150 25 -60 -40 -20 0 20 40 60 80 100 120 140 Tj / C VGS(TO) / V 4 3 2 1 0 max. typ. min. 0 2 4 6 8 10 10 9 8 7 6 5 4 3 2 1 0 gfs / S ID / A 0 1 2 3 4 VGS / V ID / A 1E-01 1E-02 1E-03 1E-04 1E-05 1E-06 SUB-THRESHOLD CONDUCTION typ 2 % 98 % -60 -40 -20 0 20 40 60 80 100 120 140 Tj / C a Normalised RDS(ON) = f(Tj) 1.5 1.0 0.5 0 0 20 40 VDS / V C / pF Ciss Coss Crss 10 100 1000 10000 BUK4y3-50 September 1995 4 Rev 1.200 |
类似零件编号 - BUK483-60A |
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类似说明 - BUK483-60A |
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