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STGP10NB60SD 数据表(PDF) 3 Page - STMicroelectronics |
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STGP10NB60SD 数据表(HTML) 3 Page - STMicroelectronics |
3 / 12 page STGP10NB60SD 2 Electrical characteristics 3/12 2 Electrical characteristics (TCASE = 25 °C unless otherwise specified) Table 3. Static Table 4. Dynamic Symbol Parameter Test Conditions Min. Typ. Max. Unit VBR(CES) Collector-Emitter Breakdown Voltage IC= 250µA, VGE= 0 600 V VBR(CES) Collector-Emitter Breakdown Voltage IC= 1mA, VGE= 0 20 V VCE(sat) Collector-Emitter Saturation Voltage VGE= 15V, IC= 5A VGE= 15V, IC= 10A VGE=15V, IC= 10A, Tc= 125°C 1.15 1.35 1.25 1.7 V V V VGE(th) Gate Threshold Voltage VCE= VGE, IC= 250µA 2.5 5 V ICES Collector cut-off Current (VGE = 0) VCE= Max Rating,TC= 25°C VCE=Max Rating,TC= 125°C 10 100 µA µA IGES Gate-Emitter Leakage Current (VCE = 0) VGE= ±20V , VCE= 0 ±100 nA gfs Forward Transconductance VCE = 25V, IC= 10A 5S Symbol Parameter Test Conditions Min. Typ. Max. Unit Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE = 25V, f = 1MHz, VGE = 0 610 65 12 pF pF pF Qg Total Gate Charge VCE = 400V, IC = 5A, VGE = 15V, (see Figure 17) 33 nC ICL Latching Current Vclamp=480V, RG=1kΩ Tj=125°C 20 A |
类似零件编号 - STGP10NB60SD |
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类似说明 - STGP10NB60SD |
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