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STGB10NC60KD 数据表(PDF) 4 Page - STMicroelectronics |
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STGB10NC60KD 数据表(HTML) 4 Page - STMicroelectronics |
4 / 17 page Electrical characteristics STGB10NC60KD - STGP10NC60KD - STGF10NC60KD 4/17 2 Electrical characteristics (TCASE=25°C unless otherwise specified) Table 3. Static Symbol Parameter Test conditions Min. Typ. Max. Unit VBR(CES) Collector-emitter breakdown voltage IC= 1mA, VGE= 0 600 V VCE(sat) Collector-emitter saturation voltage VGE= 15V, IC= 5A VGE= 15V, IC= 5A, Tc= 125°C 2.2 1.8 2.5 V V VGE(th) Gate threshold voltage VCE= VGE, IC= 250 µA 4.5 6.5 V ICES Collector cut-off current (VGE = 0) VCE= Max rating,TC= 25°C VCE=Max rating,TC= 125°C 150 1 µA mA IGES Gate-emitter leakage current (VCE = 0) VGE= ±20V, VCE= 0 ±100 nA gfs Forward transconductance VCE = 15V, IC= 5A 15 S Table 4. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit Cies Coes Cres Input capacitance Output capacitance Reverse transfer capacitance VCE = 25V, f = 1MHz, VGE = 0 380 46 8.5 pF pF pF Qg Qge Qgc Total gate charge Gate-emitter charge Gate-collector charge VCE = 390V, IC = 5A, VGE = 15V, (see Figure 18) 19 5 9 nC nC nC |
类似零件编号 - STGB10NC60KD |
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类似说明 - STGB10NC60KD |
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