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STGB6NC60HDT4 数据表(PDF) 6 Page - STMicroelectronics |
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STGB6NC60HDT4 数据表(HTML) 6 Page - STMicroelectronics |
6 / 17 page Electrical characteristics STGB6NC60HD - STGP6NC60HD - STGF6NC60HD 6/17 Table 7. Collector-emitter diode Symbol Parameter Test conditions Min. Typ. Max. Unit Vf Forward on-voltage If = 1.5A If = 1.5A, Tj = 125°C 1.6 1.3 2.1 V V trr Qrr Irrm Reverse recovery time Reverse recovery charge Reverse recovery current If = 3A ,VR = 40V, Tj = 25°C, di/dt = 100 A/ µs (see Figure 20) 21 14 1.36 ns nC A trr Qrr Irrm Reverse recovery time Reverse recovery charge Reverse recovery current If = 3A ,VR = 40V, Tj =125°C, di/dt = 100A/ µs (see Figure 20) 34 32 1.88 ns nC A |
类似零件编号 - STGB6NC60HDT4 |
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类似说明 - STGB6NC60HDT4 |
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