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STD35NF3LL 数据表(PDF) 5 Page - STMicroelectronics

部件名 STD35NF3LL
功能描述  N-channel 30V - 0.014ohm - 35A - DPAK STripFET TM II Power MOSFET
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STD35NF3LL 数据表(HTML) 5 Page - STMicroelectronics

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STD35NF3LL
Electrical characteristics
5/13
Table 5.
Source drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ISD
ISDM
(1)
1.
Pulse width limited by safe operating area.
Source-drain current
Source-drain current
(pulsed)
35
140
A
A
VSD
(2)
2.
Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Forward on voltage
ISD = 35A, VGS = 0
1.3
V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 35A, di/dt = 100A/µs,
VDD = 15V, Tj = 150°C
(see Figure 17)
35
44
2.5
ns
nC
A


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