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STB70NF03L 数据表(PDF) 5 Page - STMicroelectronics |
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STB70NF03L 数据表(HTML) 5 Page - STMicroelectronics |
5 / 15 page STB70NF03L - STP70NF03L - STB70NF03L-1 Electrical characteristics 5/15 Table 5. Switching times Symbol Parameter Test conditions Min Typ Max Unit td(on) tr Turn-on delay time Rise time VDD = 15V ID = 35A RG =4.7Ω VGS = 5V Figure 16. 22 165 ns ns Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD= 15V ID= 70A VGS= 5V 22.5 9 12 30 nC nC nC td(off) tf Turn-off delay time Fall time VDD = 15V ID = 35A RG =4.7Ω, VGS = 5V Figure 16. 21 25 ns ns Table 6. Source drain diode Symbol Parameter Test conditions Min Typ Max Unit ISD ISDM (1) 1. Pulse width limited by safe operating area. Source-drain current Source-drain current (pulsed) 70 280 A A VSD (2) 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. Forward on voltage ISD = 70A VGS = 0 1.3 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 70A di/dt = 100A/µs VDD = 20V TJ = 150°C Figure 15. 42 52 2.5 ns nC A |
类似零件编号 - STB70NF03L_06 |
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类似说明 - STB70NF03L_06 |
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