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STP36NF06L 数据表(PDF) 5 Page - STMicroelectronics |
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STP36NF06L 数据表(HTML) 5 Page - STMicroelectronics |
5 / 14 page STP36NF06L - STB36NF06L Electrical characteristics 5/14 Table 5. Switching on/off (inductive load) Symbol Parameter Test condictions Min. Typ. Max. Unit td(on) tr Turn-on delay Time Rise time VDD=30V, ID=15A RG=4.7Ω, VGS=5V (see Figure 14) 10 80 ns ns td(off) tf Turn-off delay time Fall time VDD=30V, ID=15A RG=4.7Ω, VGS=5V (see Figure 14) 19 13 ns ns Table 6. Source Drain Diode Symbol Parameter Test condictions Min. Typ. Max. Unit ISD ISDM (1) 1. Pulse width limited by safe operating area. Source-drain current Source-drain current (pulsed) 30 120 A A VSD (2) 2. Pused: pulse duration=300µs, duty cycle 1.5% Forward on voltage ISD=24A, VGS=0 1.5 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD=20A, VDD=20V, di/dt=100A/µs, Tj=150°C 55 107 3.9 ns nC A |
类似零件编号 - STP36NF06L |
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类似说明 - STP36NF06L |
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