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STD65N55F3 数据表(PDF) 5 Page - STMicroelectronics |
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STD65N55F3 数据表(HTML) 5 Page - STMicroelectronics |
5 / 13 page STD65N55F3 Electrical characteristics 5/13 Table 5. Switching on/off (inductive load) Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) tr Turn-on delay time Rise time VDD=27V, ID= 32A, RG=4.7Ω, VGS=10V (see Figure 14) 20 50 ns ns td(off) tf Turn-off delay time Fall time VDD=27V, ID= 32A, RG=4.7Ω, VGS=10V (see Figure 14) 35 11.5 ns ns Table 6. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD ISDM Source-drain current Source-drain current (pulsed)(1) 1. Pulsed: pulse duration = 300µs, duty cycle 1.5% 65 260 A A VSD Forward on voltage ISD=65A, VGS=0 1.5 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD=65A, di/dt =100A/µs, VDD=25V, Tj=150°C (see Figure 16) 47 87 3.7 ns nC A |
类似零件编号 - STD65N55F3 |
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类似说明 - STD65N55F3 |
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