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1SMA10CAT3 数据表(PDF) 2 Page - ON Semiconductor |
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1SMA10CAT3 数据表(HTML) 2 Page - ON Semiconductor |
2 / 5 page ![]() 1SMA10CAT3 Series http://onsemi.com 2 MAXIMUM RATINGS Rating Symbol Value Unit Peak Power Dissipation (Note 1) @ TL = 25°C, Pulse Width = 1 ms PPK 400 W DC Power Dissipation @ TL = 75°C Measured Zero Lead Length (Note 2) Derate Above 75 °C Thermal Resistance from Junction−to−Lead PD RqJL 1.5 20 50 W mW/ °C °C/W DC Power Dissipation (Note 3) @ TA = 25°C Derate Above 25 °C Thermal Resistance from Junction−to−Ambient PD RqJA 0.5 4.0 250 W mW/ °C °C/W Operating and Storage Temperature Range TJ, Tstg −65 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. 10 X 1000 ms, non−repetitive. 2. 1 in square copper pad, FR−4 board. 3. FR−4 board, using ON Semiconductor minimum recommended footprint, as shown in 403B case outline dimensions spec. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Parameter IPP Maximum Reverse Peak Pulse Current VC Clamping Voltage @ IPP VRWM Working Peak Reverse Voltage IR Maximum Reverse Leakage Current @ VRWM VBR Breakdown Voltage @ IT IT Test Current Bi−Directional TVS IPP IPP V I IR IT IT IR VRWM VC VBR VRWM VC VBR |
类似零件编号 - 1SMA10CAT3_06 |
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类似说明 - 1SMA10CAT3_06 |
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