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BCP5216 数据表(PDF) 2 Page - STMicroelectronics |
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BCP5216 数据表(HTML) 2 Page - STMicroelectronics |
2 / 4 page THERMAL DATA Rthj-amb • Thermal Resistance Junction-Ambient Max 89.3 oC/W • Device mounted on a PCB area of 1 cm2 ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit ICBO Collector Cut-off Current (IE = 0) VCB = -30 V VCB = -30 V Tj = 125 oC -100 -10 nA µA V(BR)CBO Collector-Base Breakdown Voltage (IE = 0) IC = -100 µA -60 V V(BR)CEO ∗ Collector-Emitter Breakdown Voltage (IB = 0) IC = -20 mA -60 V V(BR)CER Collector-Emitter Breakdown Voltage (RBE = 1 K Ω) IC = -100 µA -60 V V(BR)EBO Emitter-Base Breakdown Voltage (IC = 0) IE = -10 µA -5 V VCE(sat) ∗ Collector-Emitter Saturation Voltage IC = -500 mA IB = -50 mA -0.5 V VBE(on) ∗ Base-Emitter On Voltage IC = -500 mA VCE = -2 V -1 V hFE ∗ DC Current Gain IC = -5 mA VCE = -2 V IC = -150 mA VCE = -2 V IC = -500 mA VCE = -2 V 40 100 25 250 fT Transition Frequency IC = -10 mA VCE = -5 V f = 20 MHz 50 MHz ∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 1.5 % BCP52-16 2/4 |
类似零件编号 - BCP5216 |
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类似说明 - BCP5216 |
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