BCP5216 datasheet(2/4 Pages) STMICROELECTRONICS

部件名	BCP5216

功能描述	LOW POWER PNP TRANSISTOR

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制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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2 / 4 page

THERMAL DATA

Rthj-amb

• Thermal Resistance Junction-Ambient

Max

89.3

oC/W

• Device mounted on a PCB area of 1 cm2

ELECTRICAL CHARACTERISTICS (Tcase = 25

oC unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ICBO

Collector Cut-off

Current (IE = 0)

VCB = -30 V

Tj = 125

oC

-100

-10

nA

µA

V(BR)CBO

Collector-Base

Breakdown Voltage

(IE = 0)

IC = -100

µA

-60

V

V(BR)CEO

∗ Collector-Emitter

Breakdown Voltage

(IB = 0)

IC = -20 mA

-60

V

V(BR)CER

Collector-Emitter

Breakdown Voltage

(RBE = 1 K

Ω)

IC = -100

µA

-60

V

V(BR)EBO

Emitter-Base

Breakdown Voltage

(IC = 0)

IE = -10

µA

-5

V

VCE(sat)

∗ Collector-Emitter

Saturation Voltage

IC = -500 mA

IB = -50 mA

-0.5

V

VBE(on)

∗ Base-Emitter On

Voltage

IC = -500 mA

VCE = -2 V

-1

V

hFE

∗

DC Current Gain

IC = -5 mA

VCE = -2 V

IC = -150 mA

VCE = -2 V

IC = -500 mA

VCE = -2 V

40

100

25

250

fT

Transition Frequency

IC = -10 mA VCE = -5 V

f = 20 MHz

50

MHz

∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 1.5 %

BCP52-16

2/4

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