1N6373_05 datasheet(3/8 Pages) ONSEMI | 1500 Watt Peak Power Mosorb TM Zener Transient Voltage Suppressors

部件名	1N6373

功能描述	1500 Watt Peak Power Mosorb TM Zener Transient Voltage Suppressors

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制造商	ONSEMI [ON Semiconductor]

网页	http://www.onsemi.com

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1N6373 − 1N6381 Series (ICTE−5 − ICTE−36, MPTE−5 − MPTE−45)

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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, VF = 3.5 V Max. @ IF (Note 3) = 100 A)

JEDEC

Device†

(ON Device)

Device

Marking

VRWM

(Note 4)

IR @

VRWM

Breakdown Voltage

VC @ IPP (Note 6)

VC (Volts) (Note 6)

QVBR

VBR (Note 5) (Volts)

@ IT

VC

IPP

@ IPP =

1 A

@ IPP =

10 A

(Volts)

(

mA)

Min

Nom

Max

(mA)

(Volts)

(A)

(mV/

°C)

1N6373, G

(MPTE−5, G)

1N6373

MPTE−5

5.0

300

6.0

−

1.0

9.4

160

7.1

7.5

4.0

1N6374, G

(MPTE−8, G)

1N6374

MPTE−8

8.0

25

9.4

−

1.0

15

100

11.3

11.5

8.0

1N6375, G

(MPTE−10,G)

1N6375

MPTE−10

10

2.0

11.7

−

1.0

16.7

90

13.7

14.1

12

1N6376, G

(MPTE−12, G)

1N6376

MPTE−12

12

2.0

14.1

−

1.0

21.2

70

16.1

16.5

14

1N6377, G

(MPTE−15, G)

1N6377

MPTE−15

15

2.0

17.6

−

1.0

25

60

20.1

20.6

18

1N6379, G

(MPTE−22, G)

1N6379

MPTE−22

22

2.0

25.9

−

1.0

37.5

40

29.8

32

26

1N6380, G

(MPTE−36, G)

1N6380

MPTE−36

36

2.0

42.4

−

1.0

65.2

23

50.6

54.3

50

1N6381, G

(MPTE−45, G)

1N6381

MPTE−45

45

2.0

52.9

−

1.0

78.9

19

63.3

70

60

ICTE−5, G

ICTE−5

5.0

300

6.0

−

1.0

9.4

160

7.1

7.5

4.0

ICTE−10, G

ICTE−10

10

2.0

11.7

−

1.0

16.7

90

13.7

14.1

8.0

ICTE−12, G

ICTE−12

12

2.0

14.1

−

1.0

21.2

70

16.1

16.5

12

ICTE−15, G

ICTE−15

15

2.0

17.6

−

1.0

25

60

20.1

20.6

14

ICTE−18, G

ICTE−18

18

2.0

21.2

−

1.0

30

50

24.2

25.2

18

ICTE−22, G

ICTE−22

22

2.0

25.9

−

1.0

37.5

40

29.8

32

21

ICTE−36, G

ICTE−36

36

2.0

42.4

−

1.0

65.2

23

50.6

54.3

26

3. Square waveform, PW = 8.3 ms, non−repetitive duty cycle.

4. A transient suppressor is normally selected according to the maximum working peak reverse voltage (VRWM), which should be equal to or

greater than the dc or continuous peak operating voltage level.

5. VBR measured at pulse test current IT at an ambient temperature of 25°C and minimum voltage in VBR is to be controlled.

6. Surge current waveform per Figure 5 and derate per Figures 1 and 2.

†The “G’’ suffix indicates Pb−Free package available.

类似零件编号 - 1N6373_05

制造商	部件名	数据表	功能描述
Motorola, Inc	1N6373A	50Kb / 6P	Zener Transient Voltage Suppressors Unidirectional and Bidirectional
MDE Semiconductor, Inc.	1N6373	55Kb / 2P	GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR

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类似说明 - 1N6373_05

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