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K8D1716U 数据表(PDF) 29 Page - Samsung semiconductor |
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K8D1716U 数据表(HTML) 29 Page - Samsung semiconductor |
29 / 40 page FLASH MEMORY K8D1716UTB / K8D1716UBB Revision 0.0 July 2004 29 Read Operations SWITCHING WAVEFORMS OE Address tCE tOEH1 CE Outputs WE HIGH-Z Output Valid tRC Address Stable tAA tOE tOH HIGH-Z tDF RY/BY HIGH Note : 1. Not 100% tested. Parameter Symbol -7 -8 -9 Unit Min Max Min Max Min Max Read Cycle Time tRC 70 - 80 - 90 - ns Address Access Time tAA -70-80 -90 ns Chip Enable Access Time tCE -70-80 -90 ns Output Enable Time tOE -25-25 -35 ns CE & OE Disable Time (1) tDF -16-16 -16 ns Output Hold Time from Address, CE or OE tOH 0-0- 0- ns OE Hold Time tOEH1 0-0- 0- ns |
类似零件编号 - K8D1716U |
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类似说明 - K8D1716U |
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