数据搜索系统,热门电子元器件搜索 |
|
STS12NF30L 数据表(PDF) 5 Page - STMicroelectronics |
|
STS12NF30L 数据表(HTML) 5 Page - STMicroelectronics |
5 / 12 page STS12NF30L Electrical characteristics 5/12 Table 6. Source drain diode Symbol Parameter Test conditions Min. Typ. Max Unit ISD Source-drain current 40 A ISDM (1) 1. Pulse width limited by safe operating area. Source-drain current (pulsed) 160 A VSD (2) 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5% Forward on voltage ISD = 12A, VGS = 0 1.3 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 12A, VDD = 15V di/dt = 100A/µs, Tj = 150°C (see Figure 14) 114 456 8 ns nC A |
类似零件编号 - STS12NF30L_07 |
|
类似说明 - STS12NF30L_07 |
|
|
链接网址 |
隐私政策 |
ALLDATASHEETCN.COM |
ALLDATASHEET是否为您带来帮助? [ DONATE ] |
关于 Alldatasheet | 广告服务 | 联系我们 | 隐私政策 | 链接交换 | 制造商名单 All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |