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SI7452DP Datasheet(数据表) 2 Page - Vishay Siliconix

部件型号  SI7452DP
说明  N-Channel 60-V (D-S) Fast Switching MOSFET
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制造商  VISHAY [Vishay Siliconix]
网页  http://www.vishay.com
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SI7452DP Datasheet(HTML) 2 Page - Vishay Siliconix

   
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Vishay Siliconix
SPICE Device Model Si7452DP
SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Simulated
Data
Measured
Data
Unit
Static
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
3.7
V
On-State Drain Current
a
ID(on)
VDS ≥ 5 V, VGS = 10 V
651
A
Drain-Source On-State Resistance
a
rDS(on)
VGS = 10 V, ID = 19.3 A
0.0063
0.007
Forward Transconductance
a
gfs
VDS = 15 V, ID = 19.3 A
57
51
S
Forward Voltage
a
VSD
IS = 4.5 A, VGS = 0 V
0.84
0.80
V
Dynamic
b
Total Gate Charge
Qg
112
105
Gate-Source Charge
Qgs
40
40
Gate-Drain Charge
Qgd
VDS = 30 V, VGS = 10 V, ID = 19.3 A
21
21
nC
Turn-On Delay Time
td(on)
65
45
Rise Time
tr
19
15
Turn-Off Delay Time
td(off)
82
90
Fall Time
tf
VDD = 30 V, RL = 30 Ω
ID ≅ 1 A, VGEN = 10 V, RG = 6 Ω
26
40
ns
Notes
a. Pulse test; pulse width
≤ 300 µs, duty cycle ≤ 2%.
b. Guaranteed by design, not subject to production testing.
2
www.vishay.com
Document Number: 72989
S-60145
Rev. B, 13-Feb-06




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