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FQPF13N50CF 数据表(PDF) 3 Page - Fairchild Semiconductor

部件名 FQPF13N50CF
功能描述  500V N-Channel MOSFET
Download  10 Pages
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制造商  FAIRCHILD [Fairchild Semiconductor]
网页  http://www.fairchildsemi.com
标志 FAIRCHILD - Fairchild Semiconductor

FQPF13N50CF 数据表(HTML) 3 Page - Fairchild Semiconductor

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FQP13N50CF / FQPF13N50CF Rev. A1
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
Figure 3. On-Resistance Variation vs.
Figure 4. Body Diode Forward Voltage
Drain Current and Gate Voltage
Variation vs. Source Current
and Temperatue
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
10
-1
10
0
10
1
10
-1
10
0
10
1
V
GS
Top:
15.0V
10.0V
8.0V
7.0V
6.0V
5.5V
5.0V
Bottom: 4.5 V
Notes :
1. 250µs Pulse Test
2. T
C = 25℃
V
DS, Drain-Source Voltage [V]
246
8
10
10
-1
10
0
10
1
150
oC
25
oC
-55
oC
Notes :
1. V
DS = 40V
2. 250µs Pulse Test
V
GS, Gate-Source Voltage [V]
0.2
0.4
0.6
0.8
1.0
1.2
1.4
10
-1
10
0
10
1
150℃
Notes :
1. V
GS = 0V
2. 250µs Pulse Test
25℃
V
SD, Source-Drain voltage [V]
0
5
10
15
20
25
30
35
0.5
1.0
1.5
V
GS = 20V
V
GS = 10V
Note : T
J = 25℃
I
D, Drain Current [A]
10
-1
10
0
10
1
0
500
1000
1500
2000
2500
3000
C
iss = Cgs + Cgd (Cds = shorted)
C
oss = Cds + Cgd
C
rss = Cgd
Notes ;
1. V
GS = 0 V
2. f = 1 MHz
C
rss
C
oss
C
iss
V
DS, Drain-Source Voltage [V]
0
1020
3040
50
0
2
4
6
8
10
12
V
DS = 250V
V
DS = 100V
V
DS = 400V
Note : I
D = 13A
Q
G, Total Gate Charge [nC]


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