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SI5509DC Datasheet(数据表) 2 Page - Vishay Siliconix

部件型号  SI5509DC
说明  N- and P-Channel 20-V (D-S) MOSFET
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制造商  VISHAY [Vishay Siliconix]
网页  http://www.vishay.com
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SI5509DC Datasheet(HTML) 2 Page - Vishay Siliconix

   
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Vishay Siliconix
SPICE Device Model Si5509DC
SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Simulated
Data
Measured
Data
Unit
Static
VDS = VGS, ID = 250 µA
N-Ch
1.2
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = −250 µA
P-Ch
1.1
V
VDS ≤ 5 V, VGS = 4.5 V
N-Ch
46
On-State Drain Current
a
ID(on)
VDS ≤ −5 V, VGS = −4.5 V
P-Ch
40
A
VGS = 4.5 V, ID = 5 A
N-Ch
0.041
0.043
VGS = −4.5 V, ID = −3.9 A
P-Ch
0.066
0.074
VGS = 2.5 V, ID = 3.9 A
N-Ch
0.072
0.068
Drain-Source On-State Resistance
a
rDS(on)
VGS = −2.5 V, ID = −2.9 A
P-Ch
0.111
0.128
VDS = 10 V, ID = 5 A
N-Ch
12
10.4
Forward Transconductance
a
gfs
VDS = − 10 V, ID = −3.9 A
P-Ch
12
8.2
S
IS = 2.4 A, VGS = 0 V
N-Ch
0.73
0.80
Diode Forward Voltage
a
VSD
IS = −1.5 A, VGS = 0 V
P-Ch
0.80
- 0.80
V
Dynamic
b
N-Ch
506
455
Input Capacitance
Ciss
P-Ch
377
300
N-Ch
80
85
Output Capacitance
Coss
P-Ch
92
95
N-Ch
28
50
Reverse Transfer Capacitance
Crss
N-Channel
VDS = 10 V, VGS = 0 V, f = 1 MHz
P-Channel
VDS = − 10 V, VGS = 0 V, f = 1 MHz
P-Ch
61
65
pF
VDS = 10V, VGS = 5V, ID = 4 A
N-Ch
4.2
4.4
VDS = −10V, VGS = −5V, ID = −3.9 A
P-Ch
3.6
4.1
N-Ch
3.8
3.8
Total Gate Charge
Qg
P-Ch
3.3
3.9
N-Ch
0.9
0.9
Gate-Source Charge
Qgs
P-Ch
0.7
0.7
N-Ch
0.95
0.95
Gate-Source Charge
Qgs
N-Channel
VDS = 10 V, VGS = 4.5V, ID = 4 A
P-Channel
VDS = −10V, VGS = −4.5V, ID = −3.9 A
P-Ch
1.25
1.25
nC
Notes
a. Pulse test; pulse width
≤ 300 µs, duty cycle ≤ 2%.
b. Guaranteed by design, not subject to production testing.
2
www.vishay.com
Document Number: 74166
S-60411
Rev. A, 20-Mar-06




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