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SI1058X 数据表(PDF) 1 Page - Vishay Siliconix

部件名 SI1058X
功能描述  N-Channel 20-V (D-S) MOSFET
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制造商  VISHAY [Vishay Siliconix]
网页  http://www.vishay.com
标志 VISHAY - Vishay Siliconix

SI1058X 数据表(HTML) 1 Page - Vishay Siliconix

  SI1058X Datasheet HTML 1Page - Vishay Siliconix SI1058X Datasheet HTML 2Page - Vishay Siliconix SI1058X Datasheet HTML 3Page - Vishay Siliconix  
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Vishay Siliconix
SPICE Device Model Si1058X
N-Channel 20-V (D-S) MOSFET
CHARACTERISTICS
• N-Channel Vertical DMOS
• Macro Model (Subcircuit Model)
• Level 3 MOS
• Apply for both Linear and Switching Application
• Accurate over the −55 to 125°C Temperature Range
• Model the Gate Charge, Transient, and Diode Reverse Recovery
Characteristics
DESCRIPTION
The attached spice model describes the typical electrical
characteristics of the n-channel vertical DMOS.
The subcircuit
model is extracted and optimized over the
−55 to 125°C
temperature ranges under the pulsed 0-V to 4.5-V gate drive. The
saturated output impedance is best fit at the gate bias near the
threshold voltage.
A novel gate-to-drain feedback capacitance network is used to model
the gate charge characteristics while avoiding convergence difficulties
of the switched Cgd model. All model parameter values are optimized
to provide a best fit to the measured electrical data and are not
intended as an exact physical interpretation of the device.
SUBCIRCUIT MODEL SCHEMATIC
This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate
data sheet of the same number for guaranteed specification limits.
1
www.vishay.com
Document Number: 74200
S-62686
Rev. A, 01-Jan-07


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